Semiconductor light emitting device and fabrication method thereof
First Claim
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1. A fabrication method of a semiconductor light emitting device comprising:
- providing a substrate;
forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate;
forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and
forming a first pad on the first transparent electrode.
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Abstract
A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.
18 Citations
32 Claims
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1. A fabrication method of a semiconductor light emitting device comprising:
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providing a substrate;
forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate;
forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and
forming a first pad on the first transparent electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor light emitting device comprising:
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a substrate;
an n-type semiconductor layer formed on the substrate;
a light emitting layer formed on the n-type semiconductor layer;
a p-type semiconductor layer formed on the light emitting layer;
a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and
a first pad formed on the first transparent electrode. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22)
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23. A fabrication method of a semiconductor light emitting device comprising:
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providing a substrate;
forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate;
depositing a metal group that at least one metal oxide generating metal and at least one current spreading metal are mixed on the p-type semiconductor layer, and thereby forming a first transparent electrode; and
forming a first pad on the p-type semiconductor layer. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32)
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Specification