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Semiconductor light emitting device and fabrication method thereof

  • US 20050067623A1
  • Filed: 09/28/2004
  • Published: 03/31/2005
  • Est. Priority Date: 09/30/2003
  • Status: Active Grant
First Claim
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1. A fabrication method of a semiconductor light emitting device comprising:

  • providing a substrate;

    forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate;

    forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and

    forming a first pad on the first transparent electrode.

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