Stacked RF power amplifier
First Claim
Patent Images
1. An RF power amplifier comprising:
- an integrated circuit;
a first power amplifier formed on the integrated circuit, the first power amplifier having a first switching device;
a second power amplifier formed on the integrated circuit, the second power amplifier having a second switching device, wherein the first and second power amplifiers are connected in a stacked arrangement between a voltage supply and ground; and
wherein the first and second switching devices are electrically isolated from each other.
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Abstract
A method and apparatus provides techniques for electrically isolating switching devices in a stacked RF power amplifier, which prevents the switching devices from being subjected to high breakdown voltages. The isolation provided allows the power amplifier to be implemented on an integrated circuit.
56 Citations
25 Claims
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1. An RF power amplifier comprising:
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an integrated circuit;
a first power amplifier formed on the integrated circuit, the first power amplifier having a first switching device;
a second power amplifier formed on the integrated circuit, the second power amplifier having a second switching device, wherein the first and second power amplifiers are connected in a stacked arrangement between a voltage supply and ground; and
wherein the first and second switching devices are electrically isolated from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of making a stacked RF power amplifier comprising:
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providing a CMOS integrated circuit;
forming first and second stacked power amplifiers on the CMOS integrated circuit, wherein the first and second stacked power amplifiers each include at least one switching device; and
electrically isolating a switching device of the first power amplifier with a switching device of the second power amplifier. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A stacked RF power amplifier comprising:
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an integrated circuit;
first and second stacked power amplifiers, wherein each power amplifier includes at least one switching device having a substrate; and
wherein the body of a switching device in the first power amplifier is electrically isolated from the body of a switching device in the second power amplifier. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A stacked RF power amplifier formed on an integrated circuit comprising:
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a first transistor formed on the integrated circuit, the first transistor having a transistor body;
a second transistor formed on the integrated circuit, the first transistor having a transistor body; and
wherein the transistor body of the first transistor is isolated from the transistor body of the second transistor. - View Dependent Claims (22, 23, 24, 25)
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Specification