Method for manufacturing planar optical waveguide

• US 20050069637A1
• Filed: 09/26/2003
• Published: 03/31/2005
• Est. Priority Date: 09/26/2003
• Status: Abandoned Application

• Current Assignee: Korea Advanced Institute of Science and Technology
• Original Assignee: Korea Advanced Institute of Science and Technology
• Inventors: Park, Oun Ho, Bae, Byeong Soo, Jung, Ji In, Kang, Eun Seok
• Application Number:
  US10/671,980
• Publication Number:
  US 20050069637A1
• Time in Patent Office: Days
• US Class Current: 427/163.200
• CPC Class Codes: G02B 6/1221 made from organic materials
• CPC Class Codes: G02B 6/138 by using polymerisation

Abstract

A method for manufacturing a planar optical waveguide, includes the steps of coating, over a lower cladding layer, an optical waveguide layer including an inorganic-organic matrix uniformly doped with photosensitive photochemical monomers, selectively exposing the waveguide layer to a beam with a predetermined range of wavelengths so as to immobilize the doped photochemical monomers, and thermally treating the waveguide layer to remove unexposed monomers and cure the exposed optical waveguide layer. Requiring no etching processes, the method can reduce the number of processing steps and produce a planar optical waveguide with a low optical loss.

Claims

1. :

A method for manufacturing a planar optical waveguide, comprising the steps of forming a lower cladding layer on a substrate, depositing an optical waveguide layer on the lower cladding layer, patterning the optical waveguide layer, and depositing an upper cladding layer on the patterned waveguide, wherein the optical waveguide layer comprises an inorganic-organic hybrid matrix uniformly doped with photosensitive photochemical monomers, and is selectively exposed to a beam having a predetermined wavelength region, unexposed monomers are removed, and the patterned layer is cured by thermal heating.

2. :

The method as set forth in claim 1, wherein the hybrid matrix contains silicon and oxygen atoms, with at least a fraction of the silicon being directly bonded to substituted or unsubstituted hydrocarbon groups.

3. :

The method as set forth in claim 2, wherein the hybrid matrix comprises an oxide of the metal selected from the elements of groups 3A, 4A, 3B-5B of the Periodic Table, and combinations thereof.

4. :

The method as set forth in claim 2, wherein the hybrid matrix comprises fluorine atoms.

5. :

The method as set forth in claim 1, wherein the photochemical monomers are selected from the group consisting of monomers capable of being dimerized upon radiation, and combinations thereof.

6. :

The method as set forth in claim 1, wherein the photochemical monomers are selected from the group consisting of monomers capable of chemically bonding to chains constituting the matrix, in the matrix upon radiation.

7. :

The method as set forth in claim 1, wherein the photochemical monomers are selected from the group consisting of monomers capable of being polymerized in the matrix upon radiation.

8. :

The method as set forth in claim 1, wherein the photochemical monomers are selected from the group consisting of ethyl 2-(1-naphthyl)acrylate, coumarin, acenaphthylene, naphthylmethacrylate, naphthylenethiol, benzoinethers, benzylketals, alpha-dialkoxyacetophenones, alpha-hydroxyalkylphenones, alpha-aminoalkylphenones, acyl-phosphine oxides, benzophenone/amines, thioxane/amines, and mixtures thereof.

9. :

The method as set forth in claim 1, wherein the optical waveguide layer is exposed to a beam through a mask covering the waveguide layer.

10. :

The method as set forth in claim 1, wherein the optical waveguide layer is exposed to laser without a mask.