Plasma processing system

• US 20050069651A1
• Filed: 09/30/2003
• Published: 03/31/2005
• Est. Priority Date: 09/30/2003
• Status: Abandoned Application

• Current Assignee: Advanced Energy Industries Incorporated, Tokyo Electron Limited
• Original Assignee: Advanced Energy Industries Incorporated, Tokyo Electron Limited
• Inventors: Miyoshi, Hideaki, Dharmasena, Gemunu Ranjith, Osselburn, Joseph J., Gilmore, Jack A., Higashiura, Tsutomu, Beizer, Theresa
• Application Number:
  US10/673,514
• Publication Number:
  US 20050069651A1
• Time in Patent Office: Days
• US Class Current: 427/452
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A processing system having a processing chamber that includes a substrate holder and an electrode. The processing system can include a pressure control system, gas supply system, and monitoring system. A multi-frequency RF source is coupled to the electrode using a reduced-element matching network having a single variable element. The multi-frequency RF source is set to a first frequency to ignite a plasma and to a second frequency to maintain the plasma.

Claims

1. A method of operating a plasma processing system, comprising:

positioning a substrate on a substrate holder in a processing chamber;

initializing the plasma processing system;

igniting a plasma using a first signal at a first RF frequency, wherein a first frequency source is coupled to an electrode in the processing chamber; and

sustaining the plasma using a second signal at a second RF frequency.

2. The method as claimed in claim 1, further comprising:

establishing a first power level for the first signal, wherein the first signal is set to a first output power level.

3. The method as claimed in claim 2, wherein the first power level is at least 50 Watts.

4. The method as claimed in claim 1, further comprising:

introducing the process gas into the processing chamber, wherein the process gas comprises at least one of a carbon-containing gas, an oxygen-containing gas, a fluorine-containing gas, and an inert gas; and

establishing the chamber pressure below approximately 0.5 Torr.

5. The method as claimed in claim 1, further comprising:

coupling the first frequency source to the electrode of the plasma processing system using a first matching network; and

tuning the first matching network to an initial condition for plasma ignition.

6. The method as claimed in claim 1, wherein the first RF frequency is at least two percent higher in frequency than the second RF frequency.

7. The method as claimed in claim 1, wherein the first RF frequency is at least ten percent higher in frequency than the second RF frequency.

8. The method as claimed in claim 1, wherein the first RF frequency is greater than approximately 40.0 MHz.

9. The method as claimed in claim 1, wherein the first RF frequency is at least two percent lower in frequency than the second RF frequency.

10. The method as claimed in claim 1, wherein the first RF frequency is at least ten percent lower in frequency than the second RF frequency.

11. The method as claimed in claim 1, wherein the first signal is provided for a first time period, and the second signal is provided for a second time period.

12. The method as claimed in claim 11, wherein the first time period has a duration that ranges from approximately ten milliseconds to approximately one second.

13. The method as claimed in claim 1, further comprising:

determining a forward power for the first signal being provided by the first frequency source;

determining a reflected power for the first signal being returned to the first frequency source; and

determining when the plasma has been ignited using at least one of the forward power and the reflected power.

14. The method as claimed in claim 5, further comprising:

determining a forward power for the first signal being provided by the first frequency source;

determining a reflected power for the first signal being returned to the first frequency source; and

determining when the plasma has been ignited using at least one of the forward power and the reflected power.

15. The method as claimed in claim 1, further comprising:

monitoring the processing chamber by a monitoring system coupled to the processing chamber to monitor optical frequencies in the processing chamber; and

determining when the plasma has been ignited using at least one optical frequency.

16. The method as claimed in claim 1, comprising:

monitoring the processing chamber by a monitoring system coupled to the processing chamber to monitor optical frequencies in the processing chamber; and

determining that the plasma has been sustained using at least one optical frequency.

17. The method as claimed in claim 5, further comprising:

tuning the first matching network from the initial condition to an operating condition; and

verifying that the plasma has not extinguished.

18. The method as claimed in claim 17, wherein the first matching network is tuned from the initial condition to the operating condition in less than 4 seconds.

19. The method as claimed in claim 1, further comprising:

coupling a second RF source to a second electrode in the processing chamber; and

providing additional power to the plasma.

20. A processing system comprising:

a processing chamber having a substrate holder and an electrode configured above the substrate holder;

a pressure control system coupled to the processing chamber;

a gas supply system coupled to the processing chamber;

a reduced element matching network coupled to the processing chamber and coupled to the electrode;

a RF generator coupled to the reduced element matching network; and

a control system coupled to the pressure control system, the gas supply system, the monitoring system, the matching network, and the RF generator.

21. The processing system as claimed in claim 20, wherein the reduced element matching network comprises an input terminal, an output terminal, a common terminal, a tunable element coupled between the input terminal and the common terminal, and a fixed element coupled between the input terminal and the output terminal.

22. The processing system as claimed in claim 21, wherein the reduced element matching network further comprises a tuning adjustment device coupled to the tunable element wherein the tuning adjustment device is coupled to the control system and the control system provides signals to the tuning adjustment device and receives signals from the tuning adjustment device.

23. The processing system as claimed in claim 21, wherein the tunable element comprises a variable capacitor.

24. The processing system as claimed in claim 23, wherein the variable capacitor has a tuning range from approximately 5 pf to approximately 250 pf.

25. The processing system as claimed in claim 21, wherein the fixed reactive element comprises a fixed capacitor.

26. The processing system as claimed in claim 25, wherein the fixed capacitor has a capacitance value in a range from approximately 20 pf to approximately 75 pf.

27. The processing system as claimed in claim 20, wherein the reduced element matching network comprises an input terminal, an output terminal, and a common terminal, the RF generator being coupled to the input terminal and the common terminal, the electrode being coupled to the output terminal, and the processing chamber being coupled to the common terminal.

28. The processing system as claimed in claim 20, wherein the RF generator is configured to operate at a first frequency during a first time period and is configured to operate at a second frequency during a second time period.

29. The processing system as claimed in claim 28, wherein the first frequency is at least two percent higher in frequency than the second frequency.

30. The processing system as claimed in claim 28, wherein the first frequency is at least ten percent higher in frequency than the second frequency.

31. The processing system as claimed in claim 28, wherein the second frequency is greater than or equal to approximately 40 MHz.

32. The processing system as claimed in claim 28, wherein the first time period has a duration that ranges from approximately ten milliseconds to approximately one second.

33. The processing system as claimed in claim 28, wherein the RF generator is configured to provide a first output power during the first time period and a second output power during the second time period.

34. The processing system as claimed in claim 33, wherein the first output power is at least fifty percent of the second output power.

35. The processing system as claimed in claim 20, wherein the monitoring system comprises:

a sensor coupled to the RF generator, the sensor providing forward power data and reflected power data to the control system, and the control system is configured to determine processing conditions using the forward power data and reflected power data.

36. The processing system as claimed in claim 35, wherein the control system is configured to use the forward power data and the reflected power data to determine when a plasma has been ignited.

37. The processing system as claimed in claim 35, wherein the control system is configured to use the forward power data and the reflected power data to determine when a plasma is stable.

38. The processing system as claimed in claim 20, wherein the monitoring system comprises:

an optical sensor coupled to the processing chamber, the optical sensor providing optical data to the control system, and the control system is configured to determine processing conditions using the optical data.

39. The processing system as claimed in claim 38, wherein the control system is configured to use the optical data to determine when a plasma has been ignited.

40. The processing system as claimed in claim 38, wherein the control system is configured to use the optical data to determine when a plasma is stable.

41. The processing system as claimed in claim 20, further comprising:

a second electrode coupled to the substrate holder;

a second matching network coupled to the second electrode; and

a second RF generator coupled to the second matching network.

42. The processing system as claimed in claim 41, wherein the second RF generator is configured to provide a first BRF signal to the second electrode.

43. The processing system as claimed in claim 20, wherein the reduced element matching network is mounted above the electrode, and a first transmission line is used to couple the matching network to the electrode.

44. The processing system as claimed in claim 43, wherein the first transmission line is less than 10 cm.

45. The processing system as claimed in claim 43, wherein the RF generator is mounted above the matching network, and a second transmission line is used to couple the RF generator to the matching network.

46. The processing system as claimed in claim 45, wherein the second transmission line is less than 31 cm.

47. The processing system as claimed in claim 20, further comprising:

a monitoring system coupled to the processing chamber.

48. A computer readable medium containing program instructions for execution on a processor, which when executed by the processor, cause a plasma processing system to perform the steps of:

initializing the plasma processing system;

supplying a first signal at a first RF frequency to ignite a plasma, wherein a first frequency source is coupled to an electrode in the processing chamber; and

supplying a second signal at a second RF frequency to sustain the plasma.

49. A plasma processing system comprising:

means for initializing the plasma processing system;

means for supplying a first signal at a first RF frequency to ignite a plasma, said means for supplying coupling said first signal to an electrode in the processing chamber; and

means for supplying a second signal at a second RF frequency to sustain the plasma.