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Atomic laminates for diffusion barrier applications

  • US 20050070097A1
  • Filed: 09/29/2003
  • Published: 03/31/2005
  • Est. Priority Date: 09/29/2003
  • Status: Abandoned Application
First Claim
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1. A method of forming a diffusion barrier for a semiconductor device, comprising:

  • providing a semiconductor substrate; and

    forming a substantially amorphous diffusion barrier layer overlying at least a portion of the semiconductor substrate, where the barrier layer comprises a multilayer diffusion barrier comprised of a plurality of sub-layers, each having a thickness predetermined to result in a substantially amorphous state, to inhibit diffusion of a chemical species through the diffusion barrier.

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