Method for forming a thin film and method for fabricating a semiconductor device

• US 20050070123A1
• Filed: 08/26/2004
• Published: 03/31/2005
• Est. Priority Date: 08/27/2003
• Status: Abandoned Application

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Hirano, Tomoyuki
• Application Number:
  US10/927,596
• Publication Number:
  US 20050070123A1
• Time in Patent Office: Days
• US Class Current: 438/778
• CPC Class Codes: H01L 21/02148 the material containing hafnium, e.g. HfSiOx or HfSiON
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02329 introduction of nitrogen
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31645 Deposition of Hafnium oxides, e.g. HfO2
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

By conducting a high temperature annealing in a nitrogen atmosphere at a temperature at which a hafnium silicate film undergoes no phase separation, hydrogen contained in the film is removed and prevention of boron penetration is made possible. The present invention provides a method for forming a thin film including a step of forming a hafnium silicate film on a substrate by an atomic layer deposition method and a step of carrying out thermal treatment on the hafnium silicate film at a thermal treatment temperature equal to or higher than a temperature at which hydrogen contained in the hafnium silicate film is removed and lower than a temperature at which the hafnium silicate film undergoes no phase separation, and a method for fabricating a semiconductor device for forming a gate dielectric film using the method for forming a thin film.

Claims

1. A method for forming a thin film, comprising the steps of:

forming a hafnium silicate film on a substrate by an atomic layer deposition method; and

subjecting said hafnium silicate film to thermal treatment at a thermal treatment temperature equal to or higher than a temperature at which hydrogen contained in said hafnium silicate film is removed and lower than a temperature at which said hafnium silicate film undergoes no phase separation.

2. The method for forming a thin film according to claim 1, wherein said hafnium silicate film contains nitrogen.

3. The method for forming a thin film according to claim 1, further comprising, after forming said hafnium silicate film and before performing said thermal treatment, a step for introducing nitrogen to said hafnium silicate film.

4. The method for forming a thin film according to claim 1, wherein said thermal treatment is performed in a nitrogen atmosphere or an inert gas atmosphere.

5. A method for fabricating a semiconductor device, comprising the steps of:

forming a gate dielectric film on a semiconductor substrate;

forming a gate electrode on said gate dielectric film; and

forming source-drain regions in said semiconductor substrate on both sides of said gate electrode,

wherein said gate dielectric film is formed through the steps of;

forming a hafnium silicate film on said semiconductor substrate by an atomic layer deposition method; and

subjecting said hafnium silicate film to thermal treatment at a thermal treatment temperature equal to or higher than a temperature at which hydrogen contained in said hafnium silicate film is removed and lower than a temperature at which said hafnium silicate film undergoes no phase separation.

6. The method for fabricating a semiconductor device according to claim 5, wherein said hafnium silicate film contains nitrogen.

7. The method for fabricating a semiconductor device according to claim 5, further comprising, after forming said hafnium silicate film and before performing said thermal treatment, a step for introducing nitrogen to said hafnium silicate film.

8. The method for fabricating a semiconductor device according to claim 5, wherein said thermal treatment is performed in a nitrogen atmosphere or an inert gas atmosphere.