Process and apparatus for treating a workpiece
First Claim
1. A method for processing a workpiece, comprising:
- placing the workpiece into a chamber;
pressurizing the chamber to an above ambient pressure;
directly or indirectly heating the workpiece, providing water vapor into the chamber, with the water vapor exceeding about 100 C; and
providing ozone gas into the chamber.
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Accused Products
Abstract
A novel chemistry, system and application technique reduces contamination of semiconductor wafers and similar substrates and enhances and expedites processing. A stream of liquid chemical is applied to the workpiece surface. Ozone is delivered either into the liquid process stream or into the process environment. The ozone is preferably generated by a high capacity ozone generator. The chemical stream is provided in the form of a liquid or vapor. A boundary layer of liquid or vapor forms on the workpiece surface. The thickness of the boundary layer is controlled. The chemical stream may include ammonium hydroxide for simultaneous particle and organic removal, another chemical to raise the pH of the solution, or other chemical additives designed to accomplish one or more specific cleaning steps.
78 Citations
21 Claims
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1. A method for processing a workpiece, comprising:
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placing the workpiece into a chamber;
pressurizing the chamber to an above ambient pressure;
directly or indirectly heating the workpiece, providing water vapor into the chamber, with the water vapor exceeding about 100 C; and
providing ozone gas into the chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for removing photoresist from a wafer, comprising:
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placing the wafer into a chamber;
directly or indirectly heating the wafer with one or more heaters in or on the chamber, providing steam in the chamber;
providing ozone gas into the chamber;
pressurizing the chamber;
contacting the wafer with steam and ozone, with the steam and ozone chemically reacting with the photoresist; and
rinsing the wafer. - View Dependent Claims (13, 14, 15)
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16. A method for cleaning a workpiece, comprising:
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placing the workpiece into a chamber;
directly or indirectly heating the workpiece with one or more heaters, providing heated water vapor in the chamber;
providing ozone gas into the chamber;
pressurizing the chamber to an above ambient pressure;
contacting the workpiece with heated and ozone, with the steam and ozone chemically reacting, in the presence of hydroxyl radicals, to clean the workpiece; and
rinsing the workpiece. - View Dependent Claims (17, 18)
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19. A system for cleaning a workpiece, comprising:
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a pressurizable chamber;
a heated water vapor supply associated with the chamber;
an ozone gas supply connecting into the chamber;
a workpiece support in the chamber for supporting the workpiece; and
a workpiece heater in the chamber on or in the wafer support for directly heating the wafer. - View Dependent Claims (20, 21)
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Specification