Sputter target having modified surface texture

• US 20050072668A1
• Filed: 08/31/2004
• Published: 04/07/2005
• Est. Priority Date: 10/06/2003
• Status: Abandoned Application

• Current Assignee: Heraeus Incorporated (Heraeus Holding GMBH)
• Original Assignee: Heraeus Incorporated (Heraeus Holding GMBH)
• Inventors: Dary, Francois, Corno, Philip D., Kennedy, Steven Roger, Cheng, Yuanda R.
• Application Number:
  US10/929,505
• Publication Number:
  US 20050072668A1
• Time in Patent Office: Days
• US Class Current: 204/298.120
• CPC Class Codes: C23C 14/3407 Cathode assembly for sputtering apparatus, e.g. Target
• CPC Class Codes: H01J 37/3423 Shape
• CPC Class Codes: H01J 37/3491 Manufacturing of targets

Abstract

The effects of sputter re-deposition are reduced by macroscopically roughening the non-sputter areas of the sputter target. The macroscopic roughening is obtained by forming a macroscopic trough pattern in the non-sputter areas of the sputter target. A variety of patterns may be used for the trough pattern. In addition to macroscopically roughing the non-sputter areas of the sputter target, microscopic roughening of the trough patterns may be performed using conventional shot, bead or grit blasting techniques.

Claims

1. A sputter target comprising:

a sputter area; and

a non-sputter area having a macroscopic trough pattern.

2. The sputter target according to claim 1, further comprising a plurality of non-sputter areas, wherein each of the non-sputter areas has a macroscopic trough pattern.

3. The sputter target according to claim 2, wherein one of the plurality of non-sputter areas is a center area of the sputter target.

4. The sputter target according to claim 2, wherein one of the plurality of non-sputter areas is a perimeter area of the sputter target.

5. The sputter target according to claim 1, wherein the macroscopic trough pattern comprises a plurality of troughs forming a series of concentric shapes.

6. The sputter target according to claim 1, wherein the macroscopic trough pattern comprises a trough forming a spiral pattern.

7. The sputter target according to claim 1, wherein the non-sputter area is counter-bored in the surface of the sputter target.

8. The sputter target according to claim 1, wherein the macroscopic trough pattern is a squared-trough pattern.

9. The sputter target according to claim 1, wherein the macroscopic trough pattern is an angled-trough pattern.

10. The sputter target according to claim 1, wherein the non-sputter area is microscopically roughened.

11. A method for preparing a sputter target comprising the step of etching a macroscopic trough pattern in a non-sputter area.

12. The method according to claim 11, further comprising the step of etching a macroscopic trough pattern in a plurality of non-sputter areas.

13. The method according to claim 11, wherein the macroscopic trough pattern comprises a plurality of troughs forming a series of concentric shapes.

14. The method according to claim 11, wherein the macroscopic trough pattern comprises a trough forming a spiral pattern.

15. The method according to claim 11, wherein the macroscopic trough pattern is a squared-trough pattern.

16. The method according to claim 11, wherein the macroscopic trough pattern is an angled-trough pattern.

17. The method according to claim 11, wherein the macroscopic trough pattern is etched in the non-sputter area using a machining process.

18. The method according to claim 11, wherein the macroscopic trough pattern is etched in the non-sputter area using a laser ablation process.

19. The method according to claim 11, further comprising the step of blasting the macroscopic trough pattern in the non-sputter area with microscopic particulate.

20. The method according to claim 11, further comprising the step of counter-boring the non-sputter area in the surface of the sputter target.