LIGHT-EMITTING DEVICE
First Claim
1. A semiconductor light-emitting device comprising:
- a substrate;
an n-type electrode located on a bottom surface of the substrate;
an active layer located on a top surface of the substrate;
a p-type semiconductor layer covering the active layer;
a reflective layer located on the p-type semiconductor layer; and
a p-type electrode covering the reflective layer.
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Accused Products
Abstract
The present invention discloses a light-emitting device that has a substrate, an n-type electrode, an active layer, a p-type semiconductor layer, a reflective layer, and a p-type electrode. The n-type electrode is located on the bottom surface of the substrate and the active layer is located on a top surface of the substrate. The p-type semiconductor layer covers the active layer. The reflective layer is located on the p-type semiconductor layer, and the p-type electrode covers the reflective layer. The reflective layer is a conductive layer with high reflectivity, and is formed under the p-type electrode to avoid light of the light-emitting device being absorbed by the metal electrode.
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Citations
22 Claims
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1. A semiconductor light-emitting device comprising:
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a substrate;
an n-type electrode located on a bottom surface of the substrate;
an active layer located on a top surface of the substrate;
a p-type semiconductor layer covering the active layer;
a reflective layer located on the p-type semiconductor layer; and
a p-type electrode covering the reflective layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor light-emitting device comprising:
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a substrate;
an n-type semiconductor layer covering the substrate;
an active layer and an n-type electrode separately covering portions of the n-type semiconductor layer;
a p-type semiconductor layer covering the active layer;
a first reflective layer located on the p-type semiconductor layer; and
a p-type electrode covering the first reflective layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification