CMOS image sensor and manufacturing method thereof

• US 20050072994A1
• Filed: 10/01/2004
• Published: 04/07/2005
• Est. Priority Date: 10/01/2003
• Status: Active Grant

• Current Assignee: DB HiTek Co., Ltd.
• Original Assignee: DONGBU ELECTRONICS CO., LTD. (DB HiTek Co., Ltd.)
• Inventors: Jeon, In-Gyun
• Granted Patent: US 7,432,125 B2
• Time in Patent Office: Days
• US Class Current: 257/291
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14689 MOS based technologies

Abstract

A CMOS image sensor-manufacturing method includes forming a photodiode on a substrate, forming an insulating layer over the substrate, forming a contact hole in the insulating layer, and forming a gate terminal over the insulating layer. The gate terminal is connected to the photodiode through the contact hole.

Claims

1. A method for manufacturing a CMOS image sensor, comprising:

forming a photodiode on a substrate;

forming an insulating layer over the substrate;

forming a contact hole in the insulating layer over the photodiode; and

forming a gate terminal over the insulating layer,

wherein the gate terminal is connected to the photodiode through the contact hole.

2. The method of claim 1, wherein forming the contact hole comprises:

forming a photoresist over the insulating layer;

forming a contact hole pattern by exposing and developing the photoresist;

forming a contact hole in the insulating layer by etching the insulating layer using the contact hole pattern as an etching mask; and

removing the contact hole pattern.

3. The method of claim 1, wherein the contact hole is formed by etching the insulating layer using a wet etching technique.

4. The method of claim 1, wherein the insulating layer is formed as at least one layer and is formed of any of silicon oxide, silicon nitride, silicon oxide nitride, and transition metal oxide.

5. A CMOS image sensor, comprising:

a substrate including a photodiode;

an insulating layer over the substrate and having a contact hole therein above the photodiode; and

a gate terminal over the insulating layer and connected to the photodiode through the contact hole.

6. The CMOS image sensor of claim 5, wherein the insulating layer comprises at least one layer and is formed of any of silicon oxide, silicon nitride, silicon oxide nitride, and transition metal oxide.