Microdevice, microdevice array, amplifying circuit, memory device, analog switch, and current control unit

• US 20050073790A1
• Filed: 09/28/2004
• Published: 04/07/2005
• Est. Priority Date: 10/03/2003
• Status: Active Grant

• Current Assignee: NGK Insulators Limited
• Original Assignee: NGK Insulators Limited
• Inventors: Nanataki, Tsutomu, Takeuchi, Yukihisa, Ohwada, Iwao
• Granted Patent: US 7,719,201 B2
• Time in Patent Office: Days
• US Class Current: 361/100
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01J 1/312 having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type H01J1/304- H01J1/308 take precedence
• CPC Class Codes: H01J 31/00 Cathode ray tubes; Electron beam tubes H01J25/00, H01J33/00, H01J35/00, H01J37/00 take precedence; details of cathode ray tubes or of electron beam tubes H01J29/00
• CPC Class Codes: H03F 99/00 Subject matter not provided for in other groups of this subclass

Abstract

A microdevice has an electron emitter including a memory for accumulating electric charges corresponding to an input voltage, for emitting electrons corresponding to the electric charges accumulated in said memory; and an amplifier connected to a power supply and including a collector electrode for capturing the electrons emitted from the electron emitter. The atmosphere between at least the electron emitter and the collector electrode is a vacuum. When the electrons emitted from the electron emitter are captured by the collector electrode of the amplifier, a collector current flows between the collector electrode and the electron emitter to amplify the input voltage.

Claims

1. A microdevice comprising:

an electron emitter including a memory for accumulating electric charges corresponding to an input voltage, for emitting electrons corresponding to the electric charges accumulated in said memory; and

an amplifier connected to a power supply and including a collector electrode for capturing the electrons emitted from said electron emitter;

wherein the atmosphere between at least said electron emitter and the collector electrode is a vacuum.

2. A microdevice according to claim 1, wherein said input voltage is applied to said electron emitter in a first period to accumulate electric charges corresponding to a level of said input voltage in said electron emitter;

wherein a voltage necessary to emit electrons is applied to said electron emitter in a second period to emit electrons corresponding to the accumulated electric charges from said electron emitter; and

wherein said amplifier outputs a voltage corresponding to a collector current that flows in said collector electrode when said electrons are emitted from the electron emitter.

3. A microdevice according to claim 2, further comprising:

a load connected between said collector electrode and said power supply;

wherein said microdevice outputs a voltage generated across said load by said collector current.

4. A microdevice according to claim 1, wherein said electron emitter has an emitter made of a dielectric material and a first electrode and a second electrode between which a voltage is applicable;

said first electrode being disposed on a first surface of said emitter;

said second electrode being disposed on a second surface of said emitter; and

at least said first electrode having a plurality of through regions through which said emitter is exposed, each of said through regions of said first electrode including a peripheral portion having a surface facing said emitter, said surface being spaced from said emitter.

5. A microdevice according to claim 4, wherein at least said first surface of said emitter is an uneven surface based on the grain boundary of said dielectric material,

said through regions of said first electrode being formed in areas corresponding to notches of the grain boundary of said dielectric material.

6. A microdevice according to claim 4, wherein said first electrode comprises a cluster of a plurality of scale-like members or a cluster of electrically conductive members including scale-like members.

7. A microdevice according to claim 1, wherein said electron emitter has:

an emitter made of a dielectric material;

a first electrode disposed in contact with a first surface of said emitter; and

a second electrode disposed in contact with a second surface of said emitter;

at least said first electrode having a plurality of through regions through which said emitter is exposed;

said electron emitter having in its electrical operation, between said first electrode and said second electrode;

a capacitor formed from said emitter; and

a cluster of capacitors provided between said first electrode and said emitter by said through regions of said first electrode.

8. A microdevice according to claim 7, wherein at least said first surface of said emitter is an uneven surface based on the grain boundary of said dielectric material,

said through regions of said first electrode being formed in areas corresponding to notches of the grain boundary of said dielectric material.

9. A microdevice according to claim 7, wherein said first electrode comprises a cluster of a plurality of scale-like members or a cluster of electrically conductive members including scale-like members.

10. A microdevice array comprising:

a first substrate having thereon a two-dimensional array of microdevices each according to claim 1, and interconnects interconnecting said microdevices and interconnects interconnecting said microdevices and input/output terminals;

a second substrate having individual collector electrodes positioned in facing relation to the respective microdevices disposed on said first substrate, and interconnects interconnecting said collector electrodes and interconnects interconnecting said collector electrodes and input/output terminals; and

a power supply connected to said collector electrodes and providing an amplifier;

wherein the atmosphere between at least said first substrate and said second substrate is a vacuum.

11. An amplifying circuit comprising:

an electron emitter including a memory for accumulating electric charges corresponding to an input voltage, for emitting electrons corresponding to the electric charges accumulated in said memory; and

an amplifier connected to a power supply and including a collector electrode for capturing the electrons emitted from said electron emitter;

wherein the atmosphere between at least said electron emitter and the collector electrode is a vacuum.

12. A memory device comprising:

an electron emitter including a memory for accumulating electric charges corresponding to a write voltage, for emitting electrons corresponding to the electric charges accumulated in said memory; and

an amplifier connected to a power supply and including a collector electrode for capturing the electrons emitted from said electron emitter;

wherein the atmosphere between at least said electron emitter and said collector electrode is a vacuum.

13. A memory device according to claim 12, wherein said write voltage is applied to said electron emitter in a write period to accumulate electric charges corresponding to a level of said write voltage in said electron emitter;

wherein a read voltage necessary to emit electrons is applied to said electron emitter in a read period to emit electrons corresponding to the accumulated electric charges from said electron emitter; and

wherein said amplifier outputs a voltage corresponding to a collector current that flows in said collector electrode when said electrons are emitted from the electron emitter.

14. A memory device according to claim 12, wherein said write voltage comprises an analog voltage corresponding to analog data, and the electric charges accumulated in said memory represent an analog value corresponding to said analog data.

15. A memory device according to claim 14, wherein said read voltage for reading the analog value accumulated in said memory is of a constant value independent of said analog data.

16. An analog switch comprising:

an electron emitter including a memory for accumulating electric charges corresponding to an input voltage, for emitting electrons corresponding to the electric charges accumulated in said memory; and

an amplifier connected to a power supply and including a collector electrode for capturing the electrons emitted from said electron emitter;

wherein the atmosphere between at least said electron emitter and said collector electrode is a vacuum.

17. An analog switch according to claim 16, wherein said input voltage is applied to said electron emitter in an input period to accumulate electric charges corresponding to a level of said input voltage in said electron emitter;

wherein an on-control voltage necessary to emit electrons is applied to said electron emitter in an on-control period to emit electrons corresponding to the accumulated electric charges from said electron emitter; and

wherein said amplifier outputs a voltage corresponding to a collector current that flows in said collector electrode when said electrons are emitted from the electron emitter.

18. A current control unit comprising:

an electron emitter including a memory for accumulating electric charges corresponding to an input voltage, for emitting electrons corresponding to the electric charges accumulated in said memory; and

an amplifier connected to a power supply and including a collector electrode for capturing the electrons emitted from said electron emitter;

wherein a direction and an amount of an output current is controlled based on a direction and an amount of a collector current that flows into said collector electrode when said electrons are emitted from said electron emitter.