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Stiction resistant release process

  • US 20050074913A1
  • Filed: 10/07/2003
  • Published: 04/07/2005
  • Est. Priority Date: 10/07/2003
  • Status: Active Grant
First Claim
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1. A method of releasing a micro-electronic device formed over an insulator of a silicon-on-insulator (SOI) substrate, comprising:

  • etching at least a portion of the insulator to separate the micro-electronic device from the SOI substrate;

    rinsing at least the micro-electronic device; and

    exposing at least the micro-electronic device to a micro-sphere solution.

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