LIGHT EMITTING DIODE HAVING AN ADHESIVE LAYER AND A REFLECTIVE LAYER AND MANUFACTURING METHOD THEREOF

• US 20050077528A1
• Filed: 10/27/2004
• Published: 04/14/2005
• Est. Priority Date: 07/15/2002
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Liu, Wen-Huang, Hsieh, Min-Hsun, Tseng, Tzu-Feng, Wang, Jen-Shui, Yeh, Ting-Wei
• Granted Patent: US 7,009,217 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the light rays directed to the reflective metal layer can be reflected therefrom to improve the brightness of the light emitting diode.

Claims

1. A light emitting diode comprising:

a substrate;

a first reaction layer formed over the substrate;

an adhesive layer formed over said first reaction layer;

a second reaction layer formed over said adhesive layer;

a reflective layer formed over said second reaction layer; and

an LED stack formed over said reflective layer.

2. A light emitting diode according to claim 1 wherein the light emitting diode further comprises a transparent conductive layer between said reflective layer and said LED stack.

3. A light emitting diode according to claim 1 wherein said reflective layer is a reflective metal layer.

4. A light emitting diode according to claim 1 wherein said reflective layer is a reflective oxide layer.

5. A light emitting diode according to claim 3 wherein said reflective metal layer comprises a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, and AuZn.

6. A light emitting diode according to claim 4 wherein said reflective oxide layer comprises a material selected from the group consisting of SiN_x, SiO₂, Al₂O₃, TiO₂, and MgO.

7. A light emitting diode according to claim 1 wherein said transparent adhesive layer comprises a material selected from the group consisting of polyimide (PI), benzocyclobutene (BCB), and perfluorocyclobutane (PFCB).

8. A light emitting diode according to claim 1 wherein said first reaction layer or said second reaction layer comprises a material selected from the group consisting of SiN_x, Ti, and Cr.