Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof

• US 20050077544A1
• Filed: 10/28/2004
• Published: 04/14/2005
• Est. Priority Date: 07/04/2003
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Liu, Wen-Huang, Hsieh, Min-Hsun, Tseng, Tzu-Feng, Wang, Jen-Shui, Yeh, Ting-Wei
• Granted Patent: US 7,008,858 B2
• Time in Patent Office: Days
• US Class Current: 257/202
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector

Abstract

A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the light rays directed to the reflective metal layer can be reflected therefrom to improve the brightness of the light emitting diode.

Claims

1. A method for manufacturing a light emitting diode comprising the steps of:

forming an LED stack over a first substrate;

forming a reflective layer over said LED stack;

forming a first reaction layer over said reflective layer;

forming a second reaction layer over a second substrate; and

holding together said first reaction layer and said second reaction layer by means of an adhesive layer.

2. A method for manufacturing a light emitting diode according to claim 1, wherein said reflective layer is a reflective metal layer.

3. A method for manufacturing a light emitting diode according to claim 1, wherein said reflective layer is a reflective oxide layer.

4. A method for manufacturing a light emitting diode according to claim 2, wherein said reflective metal layer comprises a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, and AuZn.

5. A method for manufacturing a light emitting diode according to claim 3, wherein said reflective oxide layer comprises a material selected from the group consisting of SiN_x, SiO₂, Al₂O₃, TiO₂, and MgO.

6. A method for manufacturing a light emitting diode according to claim 1, wherein said first reaction layer or said second reaction layer comprises a material selected from the group consisting of SiN_x, Ti, and Cr.

7. A method for manufacturing a light emitting diode according to claim 1 wherein the method further comprises the step of removing said first substrate.