Lateral power MOSFET for high switching speeds

• US 20050077583A1
• Filed: 10/19/2004
• Published: 04/14/2005
• Est. Priority Date: 10/29/2001
• Status: Active Grant

• Current Assignee: Power Integrations Incorporated
• Original Assignee: Power Integrations Incorporated
• Inventors: Disney, Donald Ray, Grabowski, Wayne Bryan
• Granted Patent: US 7,115,958 B2
• Time in Patent Office: Days
• US Class Current: 257/401
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/41725 Source or drain electrodes for field effect devices with monocrystalline semiconductor on source/drain region H01L29/0843
• CPC Class Codes: H01L 29/41758 for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular H01L29/41733 - H01L29/4175 take precedence
• CPC Class Codes: H01L 29/41775 characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/42372 characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out H01L29/42324 takes precedence
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/7835 with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Abstract

A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate structure in which the insulated gate is coupled to the gate electrode through contacts at a plurality of locations. The source electrode includes first and second segments. The first segment is interposed between the drain electrode and the gate electrode and acts as a field plate.

Claims

1-30. -30. (canceled)

31. A lateral field-effect transistor comprising:

interdigitated source and drain regions separated by a channel region;

a gate disposed over the channel region;

a drain electrode extending substantially over, and coupled with, the drain region;

a gate electrode extending substantially over, and coupled with, the gate, the gate electrode and the drain electrode being disposed in a general plane;

means for reducing a capacitance between the drain electrode and the gate electrode, the means including a member disposed between the gate electrode and the drain electrode in the general plane.

32. The lateral field-effect transistor according to claim 31 wherein the member comprises an electrically conductive material that is coupled to the source region.

33. The lateral field-effect transistor according to claim 31 wherein the member comprises a metal segment.

34. The lateral field-effect transistor according to claim 33 wherein the metal segment is spaced equidistant from the gate electrode and the drain electrode.

35. A field-effect transistor comprising:

a substrate;

source and drain regions disposed in the substrate;

a gate disposed over a region of the substrate between the source and drain regions;

a drain electrode disposed substantially over, and coupled with, the drain region;

a gate electrode disposed substantially over, and coupled with, the gate, the gate electrode and the drain electrode being disposed in a general plane;

a first source electrode electrically connected to the source region, the first source electrode being interposed between the drain electrode and the gate electrode in the general plane.

36. The field-effect transistor according to claim 35 further comprising a second source electrode disposed substantially over, and coupled with, the source region.

37. The field-effect transistor according to claim 36 wherein the first and second source electrodes are disposed on opposite sides of the gate electrode in the general plane.

38. The field-effect transistor according to claim 36 wherein the first and second source electrodes surround the gate electrode in the general plane.

39. The field-effect transistor according to claim 36 wherein the second source electrode is substantially wider than the first source electrode segment.

40. The field-effect transistor according to claim 35 wherein the source and drain regions are arranged in an interdigitated manner.

41. The field-effect transistor according to claim 35 wherein the source and drain electrodes each include a field plate portion.

42. A lateral field-effect transistor comprising:

a substrate;

source and drain regions disposed in the substrate;

an gate disposed over a region of the substrate between the source and drain regions;

a drain electrode extending substantially over the drain region, the drain electrode being electrically connected to the drain region;

a gate electrode extending substantially over the gate, the gate electrode being electrically connected to the gate; and

means for reducing a capacitance between the drain electrode and the gate electrode, the means including a segment of a conductive material coupled to the source region.

43. The lateral field-effect transistor according to claim 42 further comprising a source electrode extending substantially over the source region, the source electrode being electrically connected to the source region.

44. The lateral field-effect transistor according to claim 43 wherein the source electrode is adjacent a first lateral side of the gate electrode and the segment is adjacent a second lateral side of the gate electrode, with the source electrode, the gate electrode, and the segment being disposed in a general plane.

45. The lateral field-effect transistor according to claim 43 wherein the segment comprises an elongated strip of metal coupled to the source electrode.

46. The lateral field-effect transistor according to claim 42 wherein the source and drain regions are arranged in an interdigitated manner.