High-frequency power amplifier
First Claim
1. A high-frequency power amplifier for amplifying a high-frequency signal, comprising:
- a high-frequency signal amplification transistor for amplifying the high-frequency signal;
a bias circuit for supplying current to a base electrode of the high-frequency signal amplification transistor;
an inductor connected between the high-frequency signal amplification transistor and the bias circuit; and
a capacitor connected at one end between the bias circuit and the inductor and grounded at another end.
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Accused Products
Abstract
The present invention provides a compact and low-cost high-frequency power amplifier including GaAs heterojunction bipolar transistors (HBTs) but having a low level of noise in the transmission band. In the high-frequency power amplifier of the present invention, a chip capacitor 21 is connected at one end to an upstream stage bias circuit 107 via a bonding wire B1, and grounded at the other end. Also, a chip inductor 22 is connected to a base electrode of a high-frequency signal amplification HBT 101 via a bonding wire B2. In the high-frequency power amplifier of the present invention, the chip capacitor 21 causes noise generated within the upstream stage bias circuit 107 to flow to the ground, thereby reducing noise in the reception band. Also, the chip inductor 22 reduces a power loss of a high-frequency signal which is caused because the high-frequency signal flows to the ground.
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Citations
21 Claims
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1. A high-frequency power amplifier for amplifying a high-frequency signal, comprising:
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a high-frequency signal amplification transistor for amplifying the high-frequency signal;
a bias circuit for supplying current to a base electrode of the high-frequency signal amplification transistor;
an inductor connected between the high-frequency signal amplification transistor and the bias circuit; and
a capacitor connected at one end between the bias circuit and the inductor and grounded at another end. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A high-frequency power amplifier for amplifying a high-frequency signal, comprising:
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a first transistor for amplifying the high-frequency signal; and
a bias circuit for supplying bias current to a base electrode of the first transistor, wherein the bias circuit includes;
a second transistor having a characteristic different from that of the first transistor; and
a temperature compensation circuit for temperature-compensating the first transistor. - View Dependent Claims (20)
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21. A high-frequency power amplifier for amplifying a high-frequency signal, comprising:
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a transistor for amplifying the high-frequency signal;
a bias circuit for supplying bias current to a base electrode of the transistor;
a conductive line connected between the transistor and the bias circuit; and
a capacitor connected at one end between the bias circuit and the conductive line and grounded at another end, wherein the conductive line provides, as distributed constants, an inductance and a resistance which are required between the transistor and the bias circuit.
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Specification
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- Resources
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Current AssigneePanasonic Semiconductor Solutions Co., Ltd. (Winbond Electronics Corporation)
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Original AssigneeMatsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
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InventorsMaeda, Masahiro
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current330/285
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CPC Class CodesH01L 2223/665 Bias feed arrangementsH01L 2224/48091 ArchedH01L 2224/48227 connecting the wire to a bo...H01L 2924/00014 the subject-matter covered ...H03F 1/302 in bipolar transistor ampli...
