Electrostatic capacitance detection device

• US 20050078856A1
• Filed: 08/25/2004
• Published: 04/14/2005
• Est. Priority Date: 08/29/2003
• Status: Active Grant

• Current Assignee: 138 East LCD Advancements Limited (Vector Capital Corporation)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Hara, Hiroyuki, Miyasaka, Mitsutoshi
• Granted Patent: US 7,081,765 B2
• Time in Patent Office: Days
• US Class Current: 382/124
• CPC Class Codes: G06V 40/1306 non-optical, e.g. ultrasonic or capacitive sensing

Abstract

Aspects of the invention provide a superior electrostatic capacitance detecting device. The electrostatic capacitance detection device can include M number of row lines, N number of column lines, and electrostatic capacitance detecting devices formed at intersections of these lines. The electrostatic capacitance detecting element can include a signal detection element, a signal amplifying element, a column selecting element, and a row selecting element, and the signal detection element can include a capacitance detecting electrode, a capacitance detecting dielectric layer, and a reference capacitor, and one electrode of the reference capacitor connects to a column line.

Claims

1. An electrostatic capacitance detection device that reads surface contours of a target object through detection of electrostatic capacitance which changes according to a distance from the target object, comprising:

output lines and power-supply lines;

M number of row lines and N number of column lines arranged in a matrix of M rows and N columns; and

an electrostatic capacitance detecting element formed at an intersection of a row line and a column line, the electrostatic capacitance detecting element including a signal detection element, a signal amplifying element, a column selecting element, and a row detecting element,

the signal detection element having a capacity detecting electrode, a capacity detecting dielectric layer, and a reference capacitor, the reference capacitor being constituted by a reference capacitor first electrode, a reference capacitor dielectric layer, and a reference capacitor second electrode,

the signal amplifying element, the column selecting element, and the row selecting element being coupled in series and arranged between the output line and the power-supply line, and

the reference capacitor first electrode and the column line being electrically coupled.

2. The electrostatic capacitance detection device according to claim 1, further comprising:

the capacitance detection electrode and the reference capacitor second electrode being electrically coupled.

3. The electrostatic capacitance detection device according to claim 1, further comprising:

the signal amplifying element having an MIS thin-film semiconductor device for signal amplification which includes a gate electrode, a gate insulator, and a semiconductor layer, the gate electrode of the signal amplifying element being electrically coupled to the capacity detecting electrode and the reference capacitor second electrode.

4. The electrostatic capacitance detection device according to claim 1, further comprising:

the column selecting element having an MIS thin-film semiconductor device for column selection which includes a gate electrode, a gate insulator, and a semiconductor layer, the gate electrode of the column selecting element being electrically coupled to the column line.

5. The electrostatic capacitance detection device according to claim 1, further comprising:

the row selecting element having an MIS thin-film semiconductor device for row selection which includes a gate electrode, a gate insulator, and a semiconductor layer, the gate electrode of the row selecting element being electrically connected to the row line.

6. The electrostatic capacitance detection device according to claim 1, further comprising:

the signal amplifying element and the column selecting element being the thin-film conductor device of a same conductive type.

7. The electrostatic capacitance detection device according to claim 1, further comprising:

the power-supply line being coupled to a negative power supply.

8. The electrostatic capacitance detection device according to claim 7, further comprising:

the output line being coupled to a positive power supply through an instrument.

9. The electrostatic capacitance detection device according to claim 1, further comprising:

the power-supply line being coupled to a positive power supply.

10. The electrostatic capacitance detection device according to claim 9, further comprising:

the power-supply line being coupled to a negative power supply through an instrument.

11. The electrostatic capacitance detection device according to claim 6, further comprising:

the column selecting element being an n-type thin-film semiconductor device, the column line being maintained at a negative power-supply potential at a time of non-selection and at a positive potential at a time of selection.

12. The electrostatic capacitance detection device according to claim 11, further comprising:

the row selecting element being an n-type thin-film semiconductor device, the row line being maintained at a negative potential at the time of non-selection and at a positive potential at the time of selection.

13. The electrostatic capacitance detection device according to claim 6, further comprising:

the column selecting element being a p-type thin-film semiconductor device, the column line being maintained at a positive potential at a time of non-selection and at a negative potential at a time of selection.

14. The electrostatic capacitance detection device according to claim 13, further comprising:

the row selecting element being a p-type thin-film semiconductor device, the row line being maintained at a positive potential at the time of non-selection and at a negative potential at the time of selection.

15. The electrostatic capacitance detection device according to claim 1, further comprising:

the dielectric layer of the reference capacitor and the gate insulator of the MIS thin-film semiconductor device for signal amplification being formed of a same material on a same layer.

16. The electrostatic capacitance detection device according to claim 1, further comprising:

the first electrode of the reference capacitor and a drain region of the MIS thin-film semiconductor device for signal amplification being formed of a same material on a same layer.

17. The electrostatic capacitance detection device according to claim 1, further comprising:

the reference capacitor second electrode and a gate electrode of the MIS thin-film semiconductor device for signal amplification being formed of a same material on a same layer.

18. The electrostatic capacitance detection device according to claim 1, further comprising:

an element capacitance C_D that is sufficiently larger than C_R+C_T which is a sum of a reference capacitor capacitance C_R and a transistor capacitance C_T,

if the reference capacitor capacitance C_R and the transistor capacitance C_T of the MIS thin-film semiconductor device for signal amplification are defined by the equations (ε

_0o is the permitivity in vacuum)

C_R=ε

_0o·

ε

_R·

S_R /t_R
C_T=ε

_0o·

ε

_ox·

S_T/t_ox

where S_R (μ

m²) is an area of the reference capacitor electrode, t_R(μ

m) is a thickness of the reference capacitor dielectric layer, ε

_R is a dielectric constant of the reference capacitor detecting dielectric layer, S_T(μ

m²) is a gate electrode area of the MIS thin-film semiconductor device for signal amplification, t_ox is a thickness of a gate insulator, and ε

_ox is a dielectric constant of the capacitance detecting dielectric layer; and

if the element capacitance C_D of the signal detection element is defined by the equation (68 _0o is the permitivity in vacuum)

C_D=ε

_0o·

ε

_D·

S_D /t_D

where the area of the capacitance detecting electrode is S_D(μ

m²), t_D is a thickness of the capacitance detecting dielectric layer, and ε

_D is a dielectric constant of the capacitance detecting dielectric layer.

19. The electrostatic capacitance detection device according to claim 18, further comprising:

the capacitance detecting dielectric layer being located on an uppermost surface of the electrostatic capacitance detection device.

20. The electrostatic capacitance detection device according to claim 18, further comprising:

the reference capacitor capacitance C_R being sufficiently larger than the target object capacitance C_A,

if the target object is not in contact with and is separated from the capacitance detecting dielectric layer by a target object distance t_A, and a target object C_A is defined by the equation

C_A=ε

_0o·

ε

_A·

S_D /t_A

where ε

_0o is a permitivity in vacuum, ε

_A is a dielectric constant of air, and S_D is the area of the capacitance detecting electrode.

21. The electrostatic capacitance detection device according to claim 1, further comprising:

an element capacitance C_D being sufficiently larger than C_R+C_T which is a sum of a reference capacitor capacitance C_R and a transistor capacitance C_T,

if the capacitance detecting dielectric layer is located on an uppermost surface of the electrostatic capacitance detection device;

if the reference capacitor capacitance C_R and the transistor capacitance C_T of the MIS thin-film semiconductor device for signal amplification are defined by the equations (ε

_0o is the permitivity in vacuum)

C_R=ε

_0o·

ε

_R·

S_R /t_R
C_T=ε

_0o·

ε

_ox·

S_T/t_ox

where S_R (μ

m²) is an area of the reference capacitor electrode, t_R (μ

m) is a thickness of the reference capacitor dielectric layer, ε

_R is a dielectric constant of the reference capacitor dielectric layer, S_T(μ

m²) is a gate electrode area of the MIS thin-film semiconductor device for signal amplification, t_ox is a thickness of the gate insulator, and ε

_ox is a dielectric constant of the capacitance detecting dielectric layer; and

if the element capacitance C_D of the signal detection element is defined by the equation (ε

_0o is the permitivity in vacuum)

C_D=ε

_0o·

ε

_D·

S _D /t_D

where an area of the capacitance detecting electrode is S_D(μ

m²), t_D is a thickness of the capacitance detecting dielectric layer, and ε

_D is a dielectric constant of the capacitance detecting dielectric layer; and

the reference capacitor capacitance C_R being sufficiently larger than a target object capacitance C_A,

if a target object is not in contact with and is separated from the capacitance detecting dielectric layer by a target object distance t_A, and the target object C_A is defined by the equation

C_A=ε

_0o·

ε

_A·

S_D/t_A

where ε

_0o is the permitivity in vacuum, ε

_A is a dielectric constant of air, and S_D is an area of the capacitance detecting electrode.