Large-area nanoenabled macroelectronic substrates and uses therefor
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Accused Products
Abstract
A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
391 Citations
245 Claims
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1-172. -172. (canceled)
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173. An electronic substrate having a plurality of semiconductor devices, comprising:
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a substrate;
a thin film of nanowires, deposited on said substrate, with a sufficient density of nanowires to achieve an operational current level, wherein said thin film of nanowires defines a plurality of semiconductor device regions; and
one or more pairs of source and drain contacts formed at said semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices, wherein at least two or more nanowires within said thin film of nanowires form a channel between each of said respective pairs of source and drain contacts. - View Dependent Claims (175, 176, 177, 178, 179, 180, 181, 182, 183, 184, 185, 186, 187, 188, 189, 190, 191, 192, 193, 194, 195, 196, 197, 198, 199, 200, 201, 202, 203, 204, 205, 206, 207, 208, 209, 210, 211, 212, 213, 214, 215, 216, 217, 218, 219, 220, 221, 222)
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174. (canceled)
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223. (canceled)
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224. A method of making an electronic substrate having a plurality of semiconductor devices, comprising:
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(a) depositing on a substrate a thin film of nanowires with a sufficient density of nanowires to achieve an operational current level;
(b) defining a plurality of semiconductor device regions in or on the thin film of nanowires; and
(c) forming one or more pairs of source and drain contacts at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices, wherein at least two or more nanowires within said thin film of nanowires form a channel between each of said respective pairs of source and drain contacts. - View Dependent Claims (225, 227, 228, 229, 230, 231, 232, 233)
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226. (canceled)
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234. A semiconductor device comprising:
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a substrate;
a plurality of nanowires deposited on the substrate; and
at least a first source contact and a first drain contact formed in or on the substrate providing electrical connectivity to the plurality of nanowires, wherein the plurality of nanowires form a channel between said at least first source and drain contacts. - View Dependent Claims (235, 236, 237, 238, 239, 240, 241, 242, 243, 244, 245)
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Specification