PHOTONIC CRYSTAL LIGHT EMITTING DEVICE

• US 20050082545A1
• Filed: 10/21/2003
• Published: 04/21/2005
• Est. Priority Date: 10/21/2003
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Inventors: Krames, Michael R., Wierer, Jonathan J. Jr., Sigalas, Mihail M.
• Granted Patent: US 7,012,279 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate

Abstract

A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.

Claims

1. A light emitting device comprising:

a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region; and

a photonic crystal structure formed in an n-type region;

wherein the p-type region is substantially planar and the photonic crystal structure does not extend into the p-type region.

2. The device of claim 1 wherein the photonic crystal structure comprises a periodic variation in a thickness of the n-type region.

3. The device of claim 1 wherein the photonic crystal structure comprises a planar lattice of holes.

4. The device of claim 3 wherein the lattice has a lattice constant a between about 0.1 λ

and about 10 λ

, where λ

is a wavelength of light emitted by the active region.

5. The device of claim 3 wherein the lattice has a lattice constant a and the holes have a diameter between about 0.1a and about 0.5a.

6. The device of claim 3 wherein the holes have a depth between about 0.05 λ

and about 5 λ

, where λ

is a wavelength of light emitted by the active region.

7. The device of claim 3 wherein a lattice type, lattice constant, hole diameter, and hole depth are selected to create a predetenrried radiation pattern.

8. A light emitting device comprising:

a first layer of first conductivity type;

a first layer of second conductivity type;

an active region disposed between a layer of first conductivity type and a layer of second conductivity type;

a tunnel junction, the tunnel junction comprising;

a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type; and

a second layer of second conductivity type having a dopant concentration greater than the first layer of second conductivity type; and

a third layer of first conductivity type;

wherein a thickness of the third layer of first conductivity type varies periodically;

wherein the tunnel junction is between the first layer of first conductivity type and the third layer of first conductivity type.

9. The device of claim 8 wherein:

the second layer of first conductivity type has a dopant concentration ranging fom about 10¹⁸cm<sup>−

3</sup> to about 5×

10²⁰cm<sup>−

3</sup>; and

the second layer of second conductivity type has a dopant concentration ranging from about 10¹⁸cm<sup>−

3</sup> to about 5×

10²⁰cm<sup>−

3</sup>.

10. The device of claim 8 wherein thc second layer of first conductivity type has a dopant concentration ranging from about 2×

10²⁰cm<sup>−

3</sup> to about 4×

10²⁰ cm<sup>−

3</sup>.

11. The device of claim 8 wherein the second layer of second conductivity type has a dopant concentration ranging from about 7×

10¹⁹cm<sup>−

3</sup> to about 9×

10¹⁹cm<sup>−

3</sup>.

12. Tbe device of claim 8 wherein the tunnel junction has a voltage drop ranging from between about 0V to about 1V when operated in reverse-biased mode.

13. The device of claim 8 wherein the tunnel junction has a voltage drop ranging from between about 0.1V to about 1V when operated in reverse-biased mode.

14. The device of claim 8 wherein:

the second layer of first conductivity type has a thickness ranging from about 1 nm to about 50 nm; and

the second layer of second conductivity type has a thickness ranging from about 1 nm to about 50 nm.

15. The device of claim 8 wherein the tunnel junction has a thickness ranging from about 2 nm to about 100 nm.

16. The device of claim 8 wherein the active region conpnses III-nitride material.

17. The device of claim 8 wherein the periodic variation of thickness comprises a planar lattice of holes.

18. The device of claim 17 wherein the planar lattice is selected from the group consisting of a triangular lattice, a square lattice, a hexagonal lattice, and a honeycomb lattice.

19. The device of claim 17 wherein the planar lattice includes more than one lattice type.

20. The device of claim 17 wherein the lattice has a lattice constant a between about 0.1 λ

and about 10 λ

, where λ

is a wavelength of light emitted by the active region.

21. The device of claim 17 wherein the lattice has a lattice constant a between about 0.1 λ

and about 4 λ

, where λ

is a wavelength of light emitted by the active region.

22. The device of claim 17 wherein the lattice has a lattice constant a and the holes have a diameter between about 0.1a and about 0.5a.

23. The device of claim 17 wherein the boles have a depth between about 0.05 λ

and about 5 λ

, where λ

is a wavelength of light emitted by the active region.

24. The device of claim 17 wherein the holes are filled with a dielectric.

25. The device of claim 24 wherein the dielectric has a dielectric constant between about 1 and about 16.

26. The device of claim 8 wherein the third layer of first conductivity type has a thickness of at least 0.1 microns.

27. The device of claim 8 further comprising:

a first electrode electrically connected to the first layer of first conductivity type; and

a second electrode electrically connected to the third layer of first conductivity type.

28. The device of claim 27 wherein the second electrode comprises a sheet attached to the third layer of first conductivity type, wherein the sheet contacts only thicker portions of the third layer of first conductivity type.

29. The device of claim 8 wherein the periodic variation of thickness is formed on a first portion of the third layer of first conductivity type, the device further comprising an electrode electrically connected to a second portion of the third layer of first conductivity type.

30. The device of claim 8 wherein a ratio of the period of the periodic structure and the wavelength of light emitted by the active region in air is about 0.1 to about 5.

31. The device of claim 8 wherein,

the periodic variation of thickness comprises a lattice of holes;

and

a lattice type, lattice constant, hole diameter, and hole depth are selected to create a predetermined radiation pattern.

32. A method comprising:

forming a first layer of first conductivity type;

forming a first layer of second conductivity type;

forming an active region between a layer of first conductivity type and a layer of second conductivity type;

forming a tunnel junction, the tunnel junction comprising;

a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type; and

a second layer of second conductivity type having a dopant concentration greater than the first layer of second conductivity type;

forming a third layer of first conductivity type; and

forming a plurality of holes formed in the third layer of first conductivity type;

wherein;

the tunnel junction is between the first layer of first conductivity type and the third layer of first conductivity type;

the plurality of holes formed a lattice; and

a lattice type, lattice constant, hole diameter, and hole depth are selected to create a predetermined radiation pattern.

33. A light emitting device comprising:

a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region; and

a photonic crystal structure formed in an n-type region, the photonic crystal comprising a planar lattice of holes, each of the holes having a depth extending from a top opening to a bottom surface, wherein the top openings of the holes are located on a surface of the n-type region in which the photonic crystal structure is formed.

34. The device of claim 33 wherein the lattice has a lattice constant a between about 0.1 λ

and about 10 λ

, where λ

is a wavelength of light emitted by the active region

35. The device of claim 33 wherein the lattice has a lattice constant a and the holes have a diameter between about 0.1a and about 0.5a.

36. The device of claim 33 wherein the holes have a depth between about 0.05 λ

and about 5 λ

, where λ

is a wavelength of light emitted by the active region.

37. The device of claim 33 wherein a lattice type, lattice constant, hole diameter, and hole depth are selected to create a predetermined radiation pattern.

38. The device of claim 33 wherein the bottom surface of the holes are located within the n-type region in which the photonic crystal structure is formed.