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Low K dielectric integrated circuit interconnect structure

  • US 20050082606A1
  • Filed: 10/20/2003
  • Published: 04/21/2005
  • Est. Priority Date: 10/20/2003
  • Status: Abandoned Application
First Claim
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1. An integrated circuit interconnect structure, comprising:

  • a low K dielectric layer with an upper surface formed over a semiconductor;

    a first trench formed in said low K dielectric layer wherein said trench has sidewalls;

    a first contiguous barrier layer formed to a thickness X1 over said upper surface of said low k dielectric layer and formed to a thickness X2 on said trench sidewalls wherein X1 is greater than X2; and

    copper formed over said first contiguous barrier.

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