CMOS image sensor and manufacturing method thereof

• US 20050082627A1
• Filed: 09/30/2004
• Published: 04/21/2005
• Est. Priority Date: 10/01/2003
• Status: Active Grant

• Current Assignee: Columba Technologies, Inc. (Quarterhill Inc. (f/k/a Wi-LAN Inc.))
• Original Assignee: DONGBU ELECTRONICS CO., LTD. (DB HiTek Co., Ltd.)
• Inventors: Jang, Hoon
• Granted Patent: US 7,129,108 B2
• Time in Patent Office: Days
• US Class Current: 257/434
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements

Abstract

A CMOS image sensor according to the present invention includes a substrate having a light receiving region, an interlayer insulating film formed on the substrate, a plurality of metal wirings formed on the interlayer insulating film so as to expose the light receiving region, a protection layer coated on the metal wirings and the interlayer insulating film, and a plurality of color filters formed on the protection layer, wherein at least one of the color filters is provided with an isolation layer formed on an upper surface thereof.

Claims

1. A CMOS image sensor comprising:

a substrate having a light receiving region;

an interlayer insulating film formed on the substrate;

a plurality of metal wirings formed on the interlayer insulating film so as to expose the light receiving region;

a protection layer coated on the metal wirings and the interlayer insulating film; and

a plurality of color filters formed on the protection layer,

wherein at least one of the color filters is provided with an isolation layer formed on an upper surface thereof.

2. The CMOS image sensor of claim 1, wherein the isolation layer is made of any of thermal silicon oxide, silicon nitride, TEOS, silicon oxide, and silicon oxide nitride.

3. The CMOS image sensor of claim 1, wherein the isolation layer is formed at a thickness in the range from 50 to 3000Å

.

4. A method for manufacturing a CMOS image sensor comprising:

forming an interlayer insulating film on a substrate having a light receiving region;

forming a plurality of metal wirings so as to expose the light receiving region on the interlayer insulating film between the metal wirings;

forming a protection layer on the metal wirings and the interlayer insulating film; and

forming a plurality of color filters on the protection layer,

wherein at least one isolation layer is formed at least one of the color filters.

5. The method of claim 4, wherein the step of forming the color filters and the isolation layer including:

forming a first color filter on the protection layer;

forming a first isolation layer on the first color filter and the protection layer;

forming a second color filter on the first isolation layer;

forming a second isolation layer on the second color filter and the first isolation layer;

forming a third color filter on the second isolation layer; and

forming a third isolation layer on the third color filter.

6. The method of claim 5 further comprising exposing a pad part of the metal wirings after forming the third isolation layer.

7. The method of claim 5, wherein the first to third isolation layers are formed by a chemical vapor deposition technique or spin coating technique.

8. The method of claim 4, wherein the step of forming the color filters and the isolation layers including:

forming a first color filter on the protection layer;

forming a first isolation layer on the first color filter and the protection layer;

forming a second color filter on the first isolation layer;

forming a third color filter on the first isolation layer; and

forming a second isolation layer on the second color filter, third color filter, and the first isolation layer.