Flexible and elastic dielectric integrated circuit
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Accused Products
Abstract
General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.
120 Citations
166 Claims
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1-76. -76. (canceled)
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77. An integrated circuit comprising:
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a substrate having a principal surface;
a device layer formed on the principal surface of the substrate, wherein the device layer has at least one semiconductor device formed in the device layer; and
at least one of a flexible dielectric layer and an elastic dielectric layer dielectric layer overlying the at least one semiconductor device. - View Dependent Claims (78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94)
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95. An integrated circuit comprising:
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a substrate;
a device layer formed on the substrate having formed thereon circuitry including a plurality of active devices; and
at least one of a stress-controlled dielectric layer, a low stress dielectric layer, a flexible dielectric layer and an elastic dielectric layer overlying the plurality of active devices;
wherein the integrated circuit is capable of forming at least one of a substantially flexible integrated circuit and an elastic integrated circuit. - View Dependent Claims (96, 97, 98, 99, 100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111, 112)
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113. An integrated circuit comprising:
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a device layer having formed thereon circuitry including a plurality of active devices; and
at least one of a flexible dielectric layer and an elastic dielectric layer overlying the plurality of active devices. - View Dependent Claims (114, 115, 116, 117, 118, 119, 120, 121, 122, 123, 124, 125, 126, 127, 128, 129, 130, 131)
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132. A circuit interconnect comprising:
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a substrate;
at least one of a stress-controlled dielectric layer, a low stress dielectric layer, a flexible dielectric layer and an elastic dielectric layer overlying the substrate; and
a plurality of interconnect conductors formed within the at least one of the stress-controlled dielectric layer, the low stress dielectric layer, the flexible dielectric layer and the elastic dielectric layer. - View Dependent Claims (133, 134, 135, 136, 137, 138, 139, 140, 141, 142, 143, 144, 145, 146, 147, 148, 149)
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150. An integrated circuit comprising:
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a substrate; and
circuitry formed on the substrate, wherein the circuitry includes a plurality active devices;
wherein the integrated circuit is capable of forming at least one of a flexible integrated circuit and an elastic integrated circuit, while retaining its structural integrity. - View Dependent Claims (151, 152, 153, 154, 155, 156, 157, 158, 159, 160, 161, 162, 163, 164, 165, 166)
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Specification