Method and apparatus for manufacturing a magnetoresistive multilayer film

• US 20050083612A1
• Filed: 10/18/2004
• Published: 04/21/2005
• Est. Priority Date: 10/16/2003
• Status: Active Grant

• Current Assignee: Canon Anelva Corporation (Canon Inc.)
• Original Assignee: Anelva Corporation (Canon Inc.)
• Inventors: Tsunekawa, Koji, Djayaprawira, David Djulianto, Nagai, Motonobu
• Granted Patent: US 7,603,763 B2
• Time in Patent Office: Days
• US Class Current: 360/324.100
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 5/39 using magneto-resistive devices or effects
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: H01F 10/30 characterised by the composition of the intermediate layers , e.g. seed, buffer, template, diffusion preventing, cap layers H01F10/06 and H01F10/32 take precedence
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H01F 41/18 by cathode sputtering
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: Y10T 29/49025 Making disc drive
• CPC Class Codes: Y10T 29/49032 Fabricating head structure or component thereof
• CPC Class Codes: Y10T 29/49034 Treating to affect magnetic properties
• CPC Class Codes: Y10T 29/49043 Depositing magnetic layer or coating
• CPC Class Codes: Y10T 29/49044 Plural magnetic deposition layers

Abstract

This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.

Claims

1. A method for manufacturing a magnetoresistive multilayer film, comprising

laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;

and

depositing a film for the antiferromagnetic layer by sputtering as oxygen gas is added to a gas for the sputtering;

the pinned-magnetization layer being the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer;

the free-magnetization layer being the layer where direction of magnetization is free.

2. A method for manufacturing a magnetoresistive multilayer film, comprising

laminating an extra layer, an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;

and

depositing a film for the extra layer by sputtering as oxygen gas is added to a gas for the sputtering;

the pinned-magnetization layer being the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer;

the free-magnetization layer being the layer where direction of magnetization is free.

3. A method for manufacturing a magnetoresistive multilayer film, comprising

laminating a seed layer, an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;

and

depositing a film made of tantalum for the seed layer by sputtering, as oxygen gas is added to a gas for the sputtering and partial pressure of oxygen is kept at 1.0×

10<sup>−

5</sup> Pa or more;

the seed layer being the layer controlling crystal orientations in another layer laminated thereon;

the pinned-magnetization layer being the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer;

the free-magnetization layer being the layer where direction of magnetization is free.

4. A method for manufacturing a magnetoresistive multilayer film, comprising

laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;

and

depositing a film made of platinum and manganese for the antiferromagnetic layer by sputtering as oxygen is added to a gas for the sputtering and partial pressure of oxygen is kept in the range from 1.0×

10<sup>−

5</sup> to 4.0×

10<sup>−

5</sup> Pa;

the pinned-magnetization layer being the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer;

the free-magnetization layer being the layer where direction of magnetization is free.

5. A method for manufacturing a magnetoresistive multilayer film, comprising

laminating an extra layer, an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;

depositing a film for the extra layer by sputtering as oxygen gas is added to a gas for the sputtering; and

depositing a film for the antiferromagnetic layer by sputtering as oxygen gas is added to a gas for the sputtering;

the pinned-magnetization layer being the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer;

the free-magnetization layer being the layer where direction of magnetization is free.

6. A method for manufacturing a magnetoresistive multilayer film, comprising

laminating a seed layer, an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;

depositing a film made of tantalum for the seed layer by sputtering, as oxygen gas is added to a gas for the sputtering and partial pressure of oxygen is kept at 1.0×

10<sup>−

5</sup> Pa or more; and

depositing a film made of platinum and manganese for the antiferromagnetic layer by sputtering as oxygen is added to a gas for the sputtering and partial pressure of oxygen is kept in the range from 1.0×

10<sup>−

5</sup> to 4.0×

10<sup>−

5</sup> Pa;

the seed layer being the layer controlling crystal orientations in other layers laminated thereon;

the pinned-magnetization layer being the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer;

the free-magnetization layer being the layer where direction of magnetization is free.

7. A method for manufacturing a magnetoresistive multilayer film, comprising

laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer in this order on a substrate;

and

depositing a film for the antiferromagnetic layer by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used for the sputtering;

the pinned-magnetization layer being the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer;

the free-magnetization layer being the layer where direction of magnetization is free.

8. A method for manufacturing a magnetoresistive multilayer film as claimed in the claim 7, wherein the gas of atomic number larger than argon is krypton.

9. A method for manufacturing a magnetoresistive multilayer film as claimed in the claim 7, wherein the gas of atomic number larger than argon is xenon.

10. A method for manufacturing a magnetoresistive multilayer film as claimed in the claim 8, volume ratio of krypton in the gas mixture is 10 percent or more.

11. A system for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated in this order;

comprising

a chamber for depositing a film for the antiferromagnetic layer on a substrate by sputtering;

a pumping line evacuating the chamber; and

a gas introduction line introducing a gas for the sputtering into the chamber;

the gas introduction line being capable of adding oxygen gas to the gas for the sputtering.

12. A system for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated in this order;

comprising

a chamber for depositing a film for the antiferromagnetic layer on a substrate by sputtering;

a pumping line evacuating the chamber; and

a gas introduction line introducing a gas mixture for the sputtering into the chamber;

the gas mixture being of argon and a gas of atomic number larger than argon.

13. A system for manufacturing a magnetoresistive multilayer film as claimed in the claim 12, wherein the gas of atomic number larger than argon is krypton.

14. A system for manufacturing a magnetoresistive multilayer film as claimed in the claim 12, wherein the gas of atomic number larger than argon is xenon.

15. A system for manufacturing a magnetoresistive multilayer film as claimed in the claim 13, wherein the gas introduction line is capable of adding oxygen gas to the gas mixture.

16. A system for manufacturing a magnetoresistive multilayer film as claimed in the claim 14, wherein the gas introduction line is capable of adding oxygen gas to the gas mixture.