Luminescence stabilization of anodically oxidized porous silicon layers

• US 20050085001A1
• Filed: 10/25/2004
• Published: 04/21/2005
• Est. Priority Date: 12/10/2001
• Status: Active Grant

• Current Assignee: The National Research Council (The National Academies of Science)
• Original Assignee: The National Research Council (The National Academies of Science)
• Inventors: Koshida, Nobuyoshi, Boukherroub, Rabah, Wayner, Danial D. M., Lockwood, David John
• Granted Patent: US 7,119,361 B2
• Time in Patent Office: Days
• US Class Current: 438/57
• CPC Class Codes: C25D 11/32 of semiconducting materials

Abstract

A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.

Claims

1-16. -16. (canceled)

17. An optoelectronic device comprising a porous silicon structure stabilized with an anodically oxidized surface protected by an organic layer attached to said surface.

18. An optoelectronic device as claimed in claim 17, wherein said organic layer is a monolayer.

19. An optoelectronic device as claimed in claim 18, wherein said organic monolayer is attached to said surface by Si—

C, Si—

Q—

C and Si—

S—

C bonds.

20. An optoelectronic device as claimed in claim 18, wherein said organic monolayer is a mixture of different organic molecules.

21. An optoelectronic device as claimed in claim 18, wherein said organic monolayer is a mixture of saturated and conducting molecules.

22. An optoelectronic device as claimed in claim 17, wherein said structure comprises a superficial layer overlying an active layer, and said organic layer is formed on said superficial and active layers.

23. An optoelectronic device as claimed in claim 22, further comprising an ITO contact electrode deposited on said superficial layer.

24. An optical, electronic, or optoelectronic sensor comprising a porous silicon structure stabilized with an anodically oxidized surface protected by an organic layer attached to said surface.

25. An optical, electronic, or optoelectronic sensor as claimed in claim 24, wherein said organic layer is a monolayer.

26. An optical, electronic, or optoelectronic sensor as claimed in claim 25, wherein said organic monolayer is attached to said surface by Si—

C, Si—

O—

C and Si—

S—

C bonds.

27. An optical, electronic, or optoelectronic sensor as claimed in claim 25, wherein said organic monolayer is a mixture of different organic molecules.

28. An optical, electronic, or optoelectronic sensor as claimed in claim 25, wherein organic said monolayer is a mixture of saturated and conducting molecules.

29. In a method of sensing chemical and biological species, the improvement wherein said sensing is carried out with the aid of a sensor as claimed in claim 24.