Plasma processing apparatus and method for stabilizing inner wall of processing chamber

• US 20050087297A1
• Filed: 08/06/2004
• Published: 04/28/2005
• Est. Priority Date: 08/06/2003
• Status: Abandoned Application

• Current Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Itabashi, Naoshi, Yoshigai, Motohiko, Kitsunai, Hiroyuki, Ono, Tetsuo
• Application Number:
  US10/912,177
• Publication Number:
  US 20050087297A1
• Time in Patent Office: Days
• US Class Current: 156/345.240
• CPC Class Codes: B08B 7/0035 by radiant energy, e.g. UV, laser, light beam or the like
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

The invention aims at providing a plasma processing apparatus capable of removing the deposition film in the processing chamber and suppressing the corrosion of wall surface material. The plasma processing apparatus for subjecting an object to be processed to vacuum processing by introducing a processing gas into a processing chamber 101 and generating plasma 110 comprises plasma generating means 106 through 108, a monitor means 112 for detecting the existence of a reaction product containing a material constituting an inner wall 102 of the processing chamber, and an alarm means for notifying that the existence of the reaction product containing the material constituting the inner wall 102 of the processing chamber has exceeded a predetermined amount, wherein a plasma cleaning is performed for every arbitrary etching process, and a wall surface stabilization process is subsequently performed using O₂ gas or F gas.

Claims

1. A plasma processing apparatus for subjecting an object to be processed to vacuum processing by introducing processing gas into a processing chamber and generating plasma, the apparatus comprising:

a plasma generating means;

a monitor means for detecting the existence of a reaction product containing a material constituting an inner wall of the processing chamber; and

an alarm means for notifying that the existence of the reaction product containing the material constituting the inner wall of the processing chamber has exceeded a predetermined amount.

2. The plasma processing apparatus according to claim 1, wherein the monitor means is any one or a combination of the following:

a plasma emission spectrometer, a mass spectrograph or an impedance monitor detector disposed in the plasma processing chamber, a current detector, a voltage detector or a current-voltage phase detector disposed in a path for supplying power to the plasma generating means, a traveling wave detector or a reflected wave detector of power.

3. The plasma processing apparatus according to claim 2, wherein the apparatus further comprises,

a means having a function to select an arbitrary signal out of the plural signals detectable by the monitor and output from the monitor means as a detection signal indicating the existence of the reaction product containing the material constituting the inner wall of the processing chamber, and to arbitrary set a threshold value for the signal value based on which the alarm is to be output.

4. The plasma processing apparatus according to claim 3, wherein the apparatus further comprises a calculation function for selecting two or more signals out of the plural signals output from the monitor means;

subjecting the signals to any one or a combination of the following calculations;

adding, subtracting, multiplying and dividing; and

setting the calculated result as the detection signal.

8. The plasma processing apparatus according to claim 5, wherein the apparatus further comprises:

a function to carry out a wall surface stabilization process step set up in advance upon receiving a signal indicating an increase in the reaction product containing the material constituting the inner wall of the processing chamber output from the monitor means in the processing chamber according to claims 1 through 4.

9. The plasma processing apparatus according to claim 8, wherein the apparatus further comprises:

a function to extend for a predetermined time the time for carrying out the wall surface stabilization process step set up in advance in response to a total number of signals received indicating an increase in the reaction product containing the material constituting the inner wall of the processing chamber output from the monitor means in the processing chamber according to claims 1 through 4.

5. A plasma processing apparatus for subjecting an object to be processed to vacuum processing by introducing processing gas into a processing chamber in which the object is placed and generating plasma, the apparatus comprising:

a function for setting up an etching step, a plasma cleaning step, and a wall surface stabilization step for protecting an inner wall of the processing chamber, wherein the order and frequency of each step can be set arbitrarily.

6. A method for stabilizing an inner wall surface of a processing chamber in a plasma processing apparatus for subjecting an object to be processed to vacuum processing by introducing processing gas into the processing chamber in which the object is placed and generating plasma, the method comprising:

after performing a plasma cleaning process in succession to an etching process, a wall surface stabilization process is performed in which an inner wall protection gas for protecting the inner wall surface of the processing chamber is introduced and plasma processing is performed.

7. The method for stabilizing an inner wall surface of a processing chamber in a plasma processing apparatus according to claim 6, wherein

the inner wall protection gas contains either an oxygen (O₂) gas or a fluorine-based (F) gas, and the ratio of flow rate of the Oxygen (O₂) gas or fluorine-based (F) gas to the total gas flow rate is at least more than 50%.