Light transmissive cover, device provided with same and methods for manufacturing them

• US 20050087756A1
• Filed: 10/21/2004
• Published: 04/28/2005
• Est. Priority Date: 10/22/2003
• Status: Active Grant

• Current Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Original Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Inventors: Shiraishi, Akinori
• Granted Patent: US 7,274,096 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: B81B 7/0067 for controlling the passage of optical signals through the package
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/16235 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Abstract

A light transmissive cover for a device comprising: a cover member of light transmissive material; and a junction member joined to the cover member, the junction member being a member used to be joined to the body of the device and having a light interrupting film on the inner surface thereof. A device provided with a light transmissive cover, the device being provided with a cover member of light transmissive material joined to the body of device via a junction member so as to cover at least a part of the device, and having a light interrupting film on the inner surface of the junction member is also disclosed. In addition, methods for manufacturing them disclosed.

Claims

1. A light transmissive cover for a device comprising:

a cover member of light transmissive material; and

a junction member joined to the cover member, the junction member being a member to be joined to the body of the device and having a light interrupting film on the inner surface thereof.

2. A light transmissive cover for a device according to claim 1, wherein said cover member is made of glass.

3. A light transmissive cover for a device according to claim 1, wherein said junction member is made of silicon.

4. A device provided with a light transmissive cover, the device being provided with a cover member of light transmissive material joined to the body of device via a junction member so as to cover at least a part of the device, and having a light interrupting film on the inner surface of the junction member.

5. A device according to claim 4, wherein said cover member is made of glass.

6. A device according to claim 4, wherein said junction member is made of silicon.

7. A method of manufacturing a light transmissive cover for a device comprising the steps of:

patterning a junction member material sheet of wafer size or larger size to form openings in the regions destined to cover the devices later;

joining the junction member material sheet to a light transmissive material sheet; and

forming a light interrupting film on the inner surface of the opening of the junction member material sheet.

8. A method according to claim 7, wherein said light transmissive material sheet is a glass sheet.

9. A method according to claim 7, wherein said junction member material sheet is a silicon wafer.

10. A method according to claim 9, wherein said light interrupting film is formed by dry etching of said silicon wafer.

11. A method of manufacturing a light transmissive cover for a device comprising the steps of:

joining a junction member material sheet to a light transmissive material sheet;

patterning the junction member material sheet to form an opening in a region destined to cover the device later; and

forming a light interrupting film on the inner surface of the opening of the junction member material sheet.

12. A method according to claim 11, wherein said light transmissive material sheet is a glass sheet.

13. A method according to claim 11, wherein said junction member material sheet is a silicon wafer.

14. A method according to claim 13, wherein said light interrupting film is formed by dry etching of said silicon wafer.

15. A method of manufacturing a device provided with a light transmissive cover, the light transmissive cover being provided with a cover member of light transmissive material joined to the body of the device via a junction member so as to cover at least a part of the device, and having a light interrupting film on the inner surface of the junction member, said method comprising the steps of:

patterning a junction member material sheet of wafer size or larger size to form openings in a region destined to cover the device later;

joining the junction member material sheet to a light transmissive material sheet;

forming a light interrupting film on the inner surface of the opening of the junction member material sheet;

joining the junction member material sheet to a wafer having elements formed thereon; and

dicing the wafer having the elements formed thereon, together with the light transmissive material sheet and the junction member material sheet, into separate chips.

16. A method according to claim 15, wherein said light transmissive material sheet is a glass sheet.

17. A method according to claim 15, wherein said junction member material sheet is a silicon wafer.

18. A method according to claim 17, wherein said light interrupting film is formed by dry etching of said silicon wafer.

19. A method of manufacturing a device provided with a light transmissive cover, the light transmissive cover being provided with a cover member of light transmissive material joined to the body of the device via a junction member so as to cover at least a part of the device, and having a light interrupting film on the inner surface of the junction member, said method comprising the steps of:

joining a junction member material sheet to a light transmissive material sheet;

patterning the junction member material sheet to form openings in the regions destined to cover the devices later;

forming a light interrupting film on the inner surface of the opening of the junction member material sheet;

joining the junction member material sheet to a wafer having elements formed thereon; and

dicing the wafer having the elements formed thereon together with the light transmissive material sheet and junction member material sheet into separate chips.

20. A method according to claim 19, wherein said light transmissive material sheet is a glass sheet.

21. A method according to claim 19, wherein said junction member material sheet is a silicon wafer.

22. A method according to claim 21, wherein said light interrupting film is formed by dry etching of said silicon wafer.

23. A method of manufacturing a device provided with a light transmissive cover, the light transmissive cover being provided with a cover member of light transmissive material joined to the body of the device via a junction member so as to cover at least a part of the device, and having a light interrupting film on the inner surface of the junction member, said method comprising the steps of:

patterning a junction member material sheet of wafer size or larger size to form openings in the regions destined to cover the devices later;

joining the junction member material sheet to a light transmissive material sheet;

forming a light interrupting film on the inner surface of the opening of the junction member material sheet;

cutting the joined light transmissive material sheet and junction member material sheet to form individual light transmissive covers each having one above-described opening;

joining each of the individual light transmissive covers to a prescribed position of a wafer having elements formed thereon; and

dicing the wafer having the elements formed thereon into separate chips.

24. A method according to claim 23, wherein said light transmissive material sheet is a glass sheet.

25. A method according to claim 23, wherein said junction member material sheet is a silicon wafer.

26. A method according to claim 25, wherein said light interrupting film is formed by dry etching of said silicon wafer.

27. A method of manufacturing a device provided with a light transmissive cover, the light transmissive cover being provided with a cover member of a light transmissive material joined to the body of the device via a junction member so as to cover at least a part of the device, and having a light interrupting film on the inner surface of the junction member, said method comprising the steps of:

joining the junction member material sheet to a light transmissive material sheet;

patterning the junction member material sheet to form openings in the regions destined to cover the devices later;

forming a light interrupting film on the inner surface of the openings of the junction member material sheet;

cutting the joined light transmissive material sheet and junction member material sheet to form individual light transmissive covers each having one above-described opening;

joining each of the individual light transmissive covers to a prescribed position of a wafer having elements formed thereon; and

dicing the wafer having the elements formed thereon into separate chips.

28. A method according to claim 27, wherein said light transmissive material sheet is a glass sheet.

29. A method according to claim 27, wherein said junction member material sheet is a silicon wafer.

30. A method according to claim 29, wherein said light interrupting film is formed by dry etching of said silicon wafer.

31. A method of manufacturing a device provided with a light transmissive cover, the light transmissive cover being provided with a cover member of light transmissive material joined to the body of the device via a junction member so as to cover at least a part of the device, and having a light interrupting film on the inner surface of the junction member, said method comprising the steps of:

patterning a junction member material sheet of wafer size or larger size to form openings in the regions destined to cover the devices later;

joining the junction member material sheet to a light transmissive material sheet;

forming a light interrupting film on the inner surface of the opening of the junction member material sheet;

joining individual chips each having an element formed thereon to the sections of individual light transmissive covers of the junction member material sheet each having one above-mentioned opening; and

obtaining, by dicing, separate chips each comprising the section of individual light transmissive cover having the device joined thereto.

32. A method according to claim 31, wherein said light transmissive material sheet is a glass sheet.

33. A method according to claim 31, wherein said junction member material sheet is a silicon wafer.

34. A method according to claim 33, wherein said light interrupting film is formed by dry etching of said silicon wafer.

35. A method of manufacturing a device provided with a light transmissive cover, the light transmissive cover being provided with a cover member of a light transmissive material joined to the body of the device via a junction member so as to cover at least a part of the device, and having a light interrupting film on the inner surface of the junction member, said method comprising the steps of:

joining the junction member material sheet to a light transmissive material sheet;

patterning the junction member material sheet to form openings in the regions destined to cover the devices later;

forming a light interrupting film on the inner surface of the opening of the junction member material sheet;

joining individual chips each having an element formed thereon to the sections of individual light transmissive covers of the junction member material sheet having the light interrupting film formed each having one above-mentioned opening; and

obtaining, by dicing, separate chips each comprising the section of individual light transmissive cover having the device joined thereto.

36. A method according to claim 35, wherein said light transmissive material sheet is a glass sheet.

37. A method according to claim 35, wherein said junction member material sheet is a silicon wafer.

38. A method according to claim 37, wherein said light interrupting film is formed by dry etching of said silicon wafer.

39. A method of manufacturing a device provided with a light transmissive cover, the light transmissive cover being provided with a cover member of light transmissive material joined to the body of the device via a junction member so as to cover at least a part of the device, and having a light interrupting film on the inner surface of the junction member, said method comprising the steps of:

patterning a junction member material sheet of wafer size or larger size to form openings in regions destined to cover the devices later;

joining the junction member material sheet to a light transmissive material sheet;

forming a light interrupting film on the inner surface of the opening of the junction member material sheet;

cutting the joined light transmissive material sheet and junction member material sheet to form individual light transmissive covers each having one above-mentioned opening; and

joining the individual light transmissive cover to an individual chip having an element formed thereon.

40. A method according to claim 39, wherein said light transmissive material sheet is a glass sheet.

41. A method according to claim 39, wherein said junction member material sheet is a silicon wafer.

42. A method according to claim 41, wherein said light interrupting film is formed by dry etching of said silicon wafer.

43. A method of manufacturing a device provided with a light transmissive cover, the light transmissive cover being provided with a cover member of light transmissive material joined to the body of the device via a junction member so as to cover at least a part of the device, and having a light interrupting film on the inner surface of the junction member, said method comprising the steps of:

joining the junction member material sheet to a light transmissive material sheet;

patterning the junction member material sheet to form openings in the regions destined to cover the devices later;

forming a light interrupting film on the inner surface of the opening of the junction member material sheet;

cutting the joined light transmissive material sheet and junction member material sheet to form individual light transmissive covers each having one above-mentioned opening; and

joining the individual light transmissive cover to an individual chip having an element formed thereon.

44. A method according to claim 43, wherein said light transmissive material sheet is a glass sheet.

45. A method according to claim 43, wherein said junction member material sheet is a silicon wafer.

46. A method according to claim 45, wherein said light interrupting film is formed by dry etching of said silicon wafer.