CMOS image sensor and method for fabricating the same
First Claim
1. A CMOS image sensor comprising:
- a first conductive type semiconductor substrate having an active area and a device isolation area, the active area including a photodiode and a transistor;
a device isolation layer formed in the device isolation area of the semiconductor substrate;
a second conductive type diffusion area formed in the photodiode of the semiconductor substrate at a predetermined interval from the device isolation layer;
a gate insulating layer and a gate electrode formed in the transistor of the semiconductor substrate; and
a first conductive type first diffusion area formed in the semiconductor substrate of the boundary between the second conductive type diffusion area and the device isolation layer.
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Abstract
A CMOS image sensor and a method for fabricating the same is disclosed, to decrease a darkcurrent generated in the boundary between a diffusion area of a photodiode and a device isolation layer, which includes a first conductive type semiconductor substrate having an active area and a device isolation area, the active area including a photodiode and a transistor; a device isolation layer formed in the device isolation area of the semiconductor substrate; a second conductive type diffusion area formed in the photodiode of the semiconductor substrate at a predetermined interval from the device isolation layer; a gate insulating layer and a gate electrode formed in the transistor of the semiconductor substrate; and a first conductive type first diffusion area formed in the semiconductor substrate of the boundary between the second conductive type diffusion area and the device isolation layer.
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Citations
29 Claims
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1. A CMOS image sensor comprising:
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a first conductive type semiconductor substrate having an active area and a device isolation area, the active area including a photodiode and a transistor;
a device isolation layer formed in the device isolation area of the semiconductor substrate;
a second conductive type diffusion area formed in the photodiode of the semiconductor substrate at a predetermined interval from the device isolation layer;
a gate insulating layer and a gate electrode formed in the transistor of the semiconductor substrate; and
a first conductive type first diffusion area formed in the semiconductor substrate of the boundary between the second conductive type diffusion area and the device isolation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for fabricating a CMOS image sensor comprising:
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forming a device isolation layer in a device isolation area of a first conductive type semiconductor substrate, so as to define an active area having a photodiode and a transistor;
forming a gate insulating layer, a gate electrode, and a sidewall insulating layer in the transistor, and forming a passivation layer on the semiconductor substrate of the boundary between the device isolation layer and the photodiode;
forming a second conductive type diffusion area in the photodiode of the active area; and
forming a first conductive type first diffusion area in the semiconductor substrate of the boundary between the second conductive type diffusion area and the device isolation layer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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22. A method for fabricating a CMOS image sensor comprising:
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forming a projected device isolation layer having a higher surface than that of a first conductive type semiconductor substrate, in a device isolation area, so as to define an active area having a photodiode and a transistor;
forming an ion implantation prevention layer at the sidewall of the projected device isolation layer;
forming a gate insulating layer and a gate electrode in the transistor;
forming a second conductive type diffusion area in the photodiode of the active area; and
forming a first conductive type first diffusion area in the semiconductor substrate of the boundary between the second conductive type diffusion area and the device isolation layer. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29)
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Specification