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Biasing for tri-layer magnetoresistive sensors

  • US 20050088789A1
  • Filed: 10/27/2003
  • Published: 04/28/2005
  • Est. Priority Date: 10/27/2003
  • Status: Active Grant
First Claim
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1. A magnetoresistive sensor comprising:

  • a tri-layer reader stack including a first ferromagnetic layer, a second ferromagnetic layer, and a magnetoresistive layer positioned therebetween; and

    biasing means positioned with respect to the tri-layer reader stack for biasing a magnetization of the first ferromagnetic layer substantially orthogonal to a magnetization of the second ferromagnetic layer.

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