Semiconductor laser beam device

• US 20050089070A1
• Filed: 03/24/2003
• Published: 04/28/2005
• Est. Priority Date: 03/25/2002
• Status: Active Grant

• Current Assignee: Panasonic Semiconductor Solutions Co., Ltd. (Winbond Electronics Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation), Tottori Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Honda, Shoji
• Granted Patent: US 7,280,572 B2
• Time in Patent Office: Days
• US Class Current: 372/36
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H01S 5/02212 Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
• CPC Class Codes: H01S 5/02253 using lenses
• CPC Class Codes: H01S 5/024 Arrangements for thermal management

Abstract

A semiconductor laser beam device, comprising a stem type package having a base part and a heat sink part, wherein the heat sink part is cylindrically formed so as to be concentric to the base part, a groove is formed along the axial direction of the heat sink part, and a semiconductor laser beam element is disposed at the bottom part of the inner wall surfaces of the groove whereby the radiating capability of the semiconductor laser beam device can be increased by increasing the volume of the heat sink part, and the element can be protected by the groove.

Claims

1. A semiconductor laser device characterized in that a groove is formed in a cylindrical heat sink along an axial direction thereof and in that a semiconductor laser element is placed on an inner wall surface of the groove.

3. A semiconductor laser device according to one of claims 1 and 2, wherein the groove is formed so deep as to include a center axis of the cylindrical heat sink.

4. A semiconductor laser device according to one of claims 1 and 2, wherein the groove is so shaped as to completely house therein the semiconductor laser element.

5. A semiconductor laser device according to one of claims 1 and 2, wherein the groove is so shaped as to completely house therein the semiconductor laser element along with bonding wires connected thereto.

6. A semiconductor laser device according to one of claims 1 and 2, wherein walls located at both sides of the groove extend to a height higher than the semiconductor laser element.

7. A semiconductor laser device according to one of claims 1 and 2, wherein the groove is formed by cutting off an arc surface of the heat sink equivalent to a center angle of 180 degrees or less.

10. A semiconductor laser device according to one of claims 1 and 2, wherein the heat sink has a tapered surface formed along an outer edge of a tip end thereof.

11. A semiconductor laser device according to one of claims 1 and 2, wherein the heat sink has a tip end thereof formed into a spherical surface.

12. A semiconductor laser device according to one of claims 1 and 2, wherein the heat sink has a bottom surface thereof formed flat.

13. A semiconductor laser device according to one of claims 1 and 2, wherein a flat-plate-shaped optical element is attached to a front end surface of the heat sink.

14. A semiconductor laser device according to one of claims 1 and 2, wherein a spherical optical element is attached to a front end surface of the heat sink.

2. A semiconductor laser device having a package comprising a circular base and a heat sink and having a semiconductor laser element placed on the heat sink, characterized in that the heat sink is cylindrical and concentric with the base, in that a groove is formed in the heat sink along an axial direction thereof, and in that the semiconductor laser element is placed on an inner wall surface of the groove.

8. A semiconductor laser device according to claim 2, wherein a lead pin is provided that, at one end thereof, penetrates the base, and the lead pin is, at the other end thereof, located in the groove.

9. A semiconductor laser device according to claim 2, wherein two lead pins are provided that, at one ends thereof, penetrate the base, and the lead pins are, at one ends thereof, located in the groove.

15. A semiconductor laser device according to claim 2, wherein the base and the heat sink are formed of a same metal.

16. A semiconductor laser device characterized in that a groove so deep as to completely house therein a semiconductor laser element is formed in a columnar heat sink, and in that the semiconductor laser element is placed on a bottom of the groove.

17. A semiconductor laser device comprising a semiconductor laser element and a columnar heat sink having a flat surface that is parallel to an optical axis of the semiconductor laser element and on which the semiconductor laser element is placed, characterized in that the heat sink has a wall formed integrally therewith at one of left-hand and right-hand sides of the flat surface with respect to the optical axis, and in that a summit of the wall is located higher than the semiconductor laser element and than a bonding wire connected thereto.