Processing apparatus and method
First Claim
1. A processing method that uses process gas plasma that contains at least hydrogen to terminate dangling bonds in an object that at least partially contains a silicon system material, said processing method comprising the steps of:
- placing the object on a susceptor in a process chamber that includes a dielectric window and the susceptor, and controlling a temperature of the susceptor to a predetermined temperature;
controlling a pressure in the process chamber to a predetermined pressure;
introducing the process gas into the process chamber; and
introducing, via the dielectric window, microwaves for a plasma treatment to the object into the process chamber so that plasma of the process gas has plasma density of 1011 cm−
3 or greater, wherein a distance between the dielectric window and the object is maintained between 20 mm and 200 mm.
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Accused Products
Abstract
A processing method that uses process gas plasma that contains at least hydrogen to terminate dangling bonds in an object that at least partially contains a silicon system material includes the steps of placing the object on a susceptor in a process chamber that includes a dielectric window and the susceptor, and controlling a temperature of the susceptor to a predetermined temperature, controlling a pressure in the process chamber to a predetermined pressure, introducing the process gas into the process chamber, and introducing, via the dielectric window, microwaves for a plasma treatment to the object into the process chamber so that plasma of the process gas has plasma density of 1011 cm−3 or greater, wherein a distance between the dielectric window and the object is maintained between 20 mm and 200 mm.
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Citations
11 Claims
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1. A processing method that uses process gas plasma that contains at least hydrogen to terminate dangling bonds in an object that at least partially contains a silicon system material, said processing method comprising the steps of:
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placing the object on a susceptor in a process chamber that includes a dielectric window and the susceptor, and controlling a temperature of the susceptor to a predetermined temperature;
controlling a pressure in the process chamber to a predetermined pressure;
introducing the process gas into the process chamber; and
introducing, via the dielectric window, microwaves for a plasma treatment to the object into the process chamber so that plasma of the process gas has plasma density of 1011 cm−
3 or greater, wherein a distance between the dielectric window and the object is maintained between 20 mm and 200 mm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A processing apparatus that provides a plasma treatment to and terminates dangling bonds in an object that at least partially contains a silicon system material, said processing apparatus comprising:
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a process chamber, connected to a microwave generator for supplying microwaves, which includes a dielectric window that allows the microwave from the microwave generator to be introduced into said process chamber, and a susceptor that supports the object;
an introducing part for introducing process gas that contains at least hydrogen gas into the process chamber;
a measurement part for measuring a plasma discharge state of plasma of the process gas; and
a controller for comparing a measurement result by said measurement part with a reference value to maintain plasma density to be 1011 cm−
3 or greater, and for giving an alarm as abnormal discharge when determining that the plasma density becomes below 1011 cm−
3, wherein a distance between the dielectric window and the object is maintained between 20 mm and 200 mm.
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Specification