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Processing apparatus and method

  • US 20050090078A1
  • Filed: 01/30/2004
  • Published: 04/28/2005
  • Est. Priority Date: 10/22/2003
  • Status: Abandoned Application
First Claim
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1. A processing method that uses process gas plasma that contains at least hydrogen to terminate dangling bonds in an object that at least partially contains a silicon system material, said processing method comprising the steps of:

  • placing the object on a susceptor in a process chamber that includes a dielectric window and the susceptor, and controlling a temperature of the susceptor to a predetermined temperature;

    controlling a pressure in the process chamber to a predetermined pressure;

    introducing the process gas into the process chamber; and

    introducing, via the dielectric window, microwaves for a plasma treatment to the object into the process chamber so that plasma of the process gas has plasma density of 1011 cm

    3
    or greater, wherein a distance between the dielectric window and the object is maintained between 20 mm and 200 mm.

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