Thin film semiconductor package and method of fabrication
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Accused Products
Abstract
A thin film semiconductor die circuit package is provided utilizing low dielectric constant (k) polymer material for the insulating layers of the metal interconnect structure. Five embodiments include utilizing glass, glass-metal composite, and glass/glass sandwiched substrates. The substrates form the base for mounting semiconductor dies and fabricating the thin film interconnect structure.
76 Citations
78 Claims
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1-41. -41. (canceled)
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42. A method of fabricating a thin film semiconductor die package structure comprising:
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providing a glass substrate with semiconductor dies mounted on the active surface;
filling polymer or epoxy between and over the backside of said semiconductor dies, to obtain a planarized surface;
grinding said backside of said semiconductor dies, to a desired thickness of said semiconductor dies and said polymer or epoxy to obtain a planarized surface;
mounting a second glass substrate on the backside of the semiconductor dies;
grinding the first glass substrate to a desired glass thickness;
etching holes in said first glass substrate to expose said semiconductor dies;
sequentially forming polymer insulating layers and metal interconnect layers over said first glass substrate;
depositing a layer of solder; and
reflowing the solder to form solder bumps.
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43-58. -58. (canceled)
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59. A method of fabricating a thin film semiconductor die package structure comprising:
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providing a glass substrate with semiconductor dies mounted on the active surface;
filling polymer or epoxy between and over the backside of said semiconductor dies, to obtain a planarized surface;
grinding said backside of said semiconductor dies, to a desired thickness of said semiconductor dies and said polymer or epoxy to obtain a planarized surface;
mounting a second glass substrate on the backside of the semiconductor dies;
grinding the first glass substrate to a desired glass thickness;
etching holes in said first glass substrate to expose said semiconductor dies;
sequentially forming polymer insulating layers and metal interconnect layers over said first glass substrate;
forming a layer of solder; and
reflowing the solder to form solder bumps. - View Dependent Claims (60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73)
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74. A method of fabricating a thin film semiconductor die package structure comprising:
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providing a glass substrate with semiconductor dies mounted on the active surface;
filling polymer or epoxy between and over the backside of said semiconductor dies, grinding said backside of said semiconductor dies, to a desired thickness of said semiconductor dies and said polymer or epoxy to obtain a planarized surface;
mounting a second glass substrate on the backside of the semiconductor dies;
removing said first glass substrate;
sequentially forming polymer insulating layers and metal interconnect layers over said semiconductor dies;
forming a layer of solder; and
reflowing the solder to form solder bumps. - View Dependent Claims (75, 76, 77, 78)
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Specification