Slurry compositions for chemical mechanical polishing of copper and barrier films
First Claim
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1. A chemical mechanical polishing slurry comprising:
- (1) at least one abrasive, (2) at least one organic phosphonate, (3) at least one oxidizer, and (4) water.
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Abstract
CMP slurries comprising at least an abrasive, at least an organic phosphonate, at least an oxidizer, and water are disclosed. The slurries can optionally include corrosion inhibitors, surfactants, polymers, and bases. The concentrations of the ingredients in the slurries can be appropriately chosen to formulate copper CMP slurry and barrier CMP slurry. The copper CMP slurries are capable of polishing copper at high removal rate and having high selectivity to tantalum barrier. The barrier slurries deliver good planarity and have high hydrogen peroxide stability.
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29 Claims
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1. A chemical mechanical polishing slurry comprising:
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(1) at least one abrasive, (2) at least one organic phosphonate, (3) at least one oxidizer, and (4) water. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification