Plasma chemical vapor deposition apparatus having an improved nozzle configuration
First Claim
1. A chemical vapor deposition (CVD) apparatus comprising:
- a process chamber;
a substrate supporter, arranged and configured for supporting a substrate, disposed within the process chamber to support a substrate;
a gas injection part arranged and configured for injecting a source gas mixture into the process chamber through a nozzle; and
an energy source configured for applying sufficient energy to the source gas mixture within the process chamber to form a plasma, wherein the nozzle includes;
a single channel portion through which a single passage for the source gas mixture is formed, the single channel portion being connected to a gas supply assembly; and
a compound channel portion through which two or more passages for the source gas mixture is formed, the compound channel portion extending from the single channel portion to an outlet portion, wherein the respective passages of the compound channel portion are each configured to have a width Wc smaller than a width Wp of the passage of the single channel portion, the width Wc being sized for suppressing reaction of the source gas mixture within the nozzle.
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Accused Products
Abstract
Provided is a high density plasma chemical vapor deposition (HDP-CVD) apparatus that includes a plurality of nozzles and/or injection pipes arranged for injecting a source gas mixture into a reaction chamber. The nozzles will each include an outlet region that includes a plurality of outlet channels or ports, the outlet channels are, in turn, configured to have a sufficiently small width and a sufficient length to suppress the formation of a plasma within the source gases passing through the respective nozzles. By suppressing the formation of a plasma within the nozzles, the thickness of deposits formed on the nozzles during the deposition processes can be maintained at a level generally no greater than deposits formed on the other chamber surfaces. This control of the deposit thickness allows the nozzles to be cleaned effectively by the same cleaning process applied to the chamber.
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Citations
62 Claims
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1. A chemical vapor deposition (CVD) apparatus comprising:
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a process chamber;
a substrate supporter, arranged and configured for supporting a substrate, disposed within the process chamber to support a substrate;
a gas injection part arranged and configured for injecting a source gas mixture into the process chamber through a nozzle; and
an energy source configured for applying sufficient energy to the source gas mixture within the process chamber to form a plasma, wherein the nozzle includes;
a single channel portion through which a single passage for the source gas mixture is formed, the single channel portion being connected to a gas supply assembly; and
a compound channel portion through which two or more passages for the source gas mixture is formed, the compound channel portion extending from the single channel portion to an outlet portion, wherein the respective passages of the compound channel portion are each configured to have a width Wc smaller than a width Wp of the passage of the single channel portion, the width Wc being sized for suppressing reaction of the source gas mixture within the nozzle. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A chemical vapor deposition (CVD) apparatus for depositing a predetermined layer on a semiconductor substrate, comprising:
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a process chamber;
a substrate supporter, arranged and configured for receiving and holding a substrate, disposed in the process chamber;
a plurality of nozzles arranged and configured for injecting source gas mixture into the process chamber; and
an upper electrode arranged and configured to apply sufficient power to the source gas mixture injected into the process chamber to excite source gas mixture into a plasma state, wherein each of the nozzles includes an outer pipe in which a through-hole provides a passage for the source gas mixture, an insertion member arranged within the through-hole at an outlet end of the outer pipe and spaced apart from an inner wall of the outer pipe, and a connection member configured for supporting and positioning the insertion member within the outer pipe, and further wherein the outer pipe is connected to a gas supply assembly; and
the insertion member extends along only a portion of the through-hole provided through the outer pipe. - View Dependent Claims (28, 29, 30)
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31. A plurality of nozzles used in a plasma processing apparatus to supply a source gas mixture to the apparatus, comprising:
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an outer pipe in which a through-hole is formed to provide a passage for the source gas mixture;
an insertion member arranged within the through-hole at an outlet end of the outer pipe, the insertion member extending along a portion of the through-hole formed in outer pipe; and
an connection member configured for supporting and positioning the insertion member within the outer pipe. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38)
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39. An injection pipe used in a plasma processing apparatus to inject a source gas mixture into a reaction chamber, comprising:
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a main body having a closed outlet end, through which a gas passage is formed; and
an outlet region formed through a sidewall region of the main body, the outlet region including at least one injection port configured for injecting the source gas mixture into the reaction chamber. - View Dependent Claims (40, 41, 42, 43, 44, 45, 46, 47)
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48. A chemical vapor deposition (CVD) apparatus comprising:
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a process chamber;
a substrate supporter disposed in the process chamber for supporting a substrate;
a plurality of nozzles arranged and configured for injecting a source gas mixture into a lower region of the process chamber, each nozzle including a plurality of outlet channels, each of the outlet channels being arranged and configured so as to suppress formation of the plasma within the nozzle;
a plurality of injection pipes arranged and configured for injecting the source gas mixture into an upper region of the process chamber, each of the injection pipes including a transfer region and an outlet region, the outlet regions including a thickened sidewall through which an injection port is provided for directing the source gas mixture into the upper region of the process chamber, the injection port being arranged and configured so as to suppress formation of the plasma within the injection pipe; and
an energy source configured for applying sufficient energy to the source gas mixture within the process chamber to form a plasma. - View Dependent Claims (49, 50)
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51. A nozzle supplying a source gas mixture into a plasma processing apparatus, comprising:
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a single channel portion in which a passage of the source gas mixture is formed, the single channel portion being connected to a gas supply assembly; and
a compound channel portion in which a plurality of passages extending from the passage of the single channel portion are formed, wherein the respective passages of the compound channel portion are narrower than the passage of the single channel portion, and the compound channel portion has a length sufficient to prevent the source mixture from being excited in the single channel portion. - View Dependent Claims (52)
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53. A nozzle configured for supplying a source gas mixture into a plasma processing apparatus, comprising:
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a single channel portion connected to a gas supply assembly; and
a compound channel portion extending from the single channel portion, wherein the source gas mixture is injected into the plasma processing apparatus through a passage formed at the single channel portion and a passage formed at the compound channel portion, the passage formed at the compound channel portion being narrower than the passage formed at the single channel portion for suppressing reaction of the source gas mixture within the nozzle. - View Dependent Claims (54, 56)
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55. A nozzle supplying a source gas mixture into a plasma processing apparatus, comprising:
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an outer pipe in which a through-hole is formed, the through-hole being connected to a gas supply assembly; and
an insertion member inserted into the through-hole of the outer pipe to supply the source gas mixture flowing along the through-hole into the plasma processing apparatus through a plurality of divided portions, wherein the insertion member is located in a region adjacent to a terminal of the outer pipe and has a length sufficient to prevent the source mixture from being excited in the single channel portion.
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57. A nozzle supplying a source gas mixture into a plasma processing apparatus, comprising:
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an outer pipe in which a through-hole is formed, the through-hole being connected to a gas supply assembly; and
an insertion member inserted into the through-hole of the outer pipe, adjacent to a terminal of the outer pipe, the insertion member dividing the through-hole of the outer pipe into a plurality of narrow portions for suppressing reaction of the source gas mixture within the nozzle. - View Dependent Claims (58)
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59. A method for supplying a source gas mixture into a plasma processing apparatus, comprising:
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flowing the source gas mixture through a single channel portion of a nozzle in which a passage connected to a gas supply assembly is formed;
flowing the source gas mixture through a compound channel portion of the nozzle having a passage which is narrower than a passage of the single channel portion; and
injecting the source gas mixture to the plasma processing apparatus, wherein the compound channel portion has a length sufficient to prevent the source mixture from being excited in the single channel portion. - View Dependent Claims (60)
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61. A method for supplying a source gas mixture into a plasma processing apparatus, comprising:
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flowing the source gas mixture along a through-hole formed at a nozzle connected to a gas supply assembly;
flowing the source gas mixture from the through-hole to a plurality of portions branching to be narrower than the through-hole; and
injecting the source gas mixture to the plasma processing apparatus, wherein the branching portions have a length sufficient to prevent the source gas mixture from being excited at an internal portion of the through-hole - View Dependent Claims (62)
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Specification