Plasma chemical vapor deposition apparatus having an improved nozzle configuration

• US 20050092245A1
• Filed: 08/16/2004
• Published: 05/05/2005
• Est. Priority Date: 11/03/2003
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Dae-Hyun, Lee, Jong-Koo, Lee, In-Cheol, Chae, Seung-Ki, Hong, Joo-Pyo, Yang, Yun-Sik, Han, Jae-Hyun, Moon, Ahn-Sik
• Application Number:
  US10/918,490
• Publication Number:
  US 20050092245A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: C23C 16/507 using external electrodes, e.g. in tunnel type reactors
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

Provided is a high density plasma chemical vapor deposition (HDP-CVD) apparatus that includes a plurality of nozzles and/or injection pipes arranged for injecting a source gas mixture into a reaction chamber. The nozzles will each include an outlet region that includes a plurality of outlet channels or ports, the outlet channels are, in turn, configured to have a sufficiently small width and a sufficient length to suppress the formation of a plasma within the source gases passing through the respective nozzles. By suppressing the formation of a plasma within the nozzles, the thickness of deposits formed on the nozzles during the deposition processes can be maintained at a level generally no greater than deposits formed on the other chamber surfaces. This control of the deposit thickness allows the nozzles to be cleaned effectively by the same cleaning process applied to the chamber.

Claims

1. A chemical vapor deposition (CVD) apparatus comprising:

a process chamber;

a substrate supporter, arranged and configured for supporting a substrate, disposed within the process chamber to support a substrate;

a gas injection part arranged and configured for injecting a source gas mixture into the process chamber through a nozzle; and

an energy source configured for applying sufficient energy to the source gas mixture within the process chamber to form a plasma,

wherein the nozzle includes;

a single channel portion through which a single passage for the source gas mixture is formed, the single channel portion being connected to a gas supply assembly; and

a compound channel portion through which two or more passages for the source gas mixture is formed, the compound channel portion extending from the single channel portion to an outlet portion,

wherein the respective passages of the compound channel portion are each configured to have a width W_c smaller than a width W_p of the passage of the single channel portion, the width W_c being sized for suppressing reaction of the source gas mixture within the nozzle.

2. The CVD apparatus according to claim 1, wherein:

the compound channel portion includes at least one outer pipe in which a through-hole is formed to provide a passage for the source gas mixture;

an insertion member inserted into the through-hole of the outer pipe to reduce the width of the passage of the outer pipe; and

a connection member configured for supporting and positioning the insertion member within the compound channel portion.

3. The CVD apparatus according to claim 2, wherein:

the compound channel portion further includes at least one insertion pipe arranged between the outer pipe and the insertion member, the connection member being configured for supporting and positioning the insertion pipe within the compound channel portion.

4. The CVD apparatus according to claim 3, wherein:

a width W_o defined between the outer pipe and the insertion pipe and a width W_i defined between the insertion pipe and the insertion member are each no greater than about 2 millimeters.

5. The CVD apparatus according to claim 2, wherein:

the insertion member is an inner pipe.

6. The CVD apparatus according to claim 5, wherein:

an outlet end of the inner pipe is disposed within the through-hole of the outer pipe.

7. The CVD apparatus according to claim 5, wherein:

an outlet end of the inner pipe is disposed in a generally coplanar configuration with an outlet end of the outer pipe.

8. The CVD apparatus according to claim 5, wherein:

an outlet end of the inner pipe projects beyond a plane defined by an outlet end of the outer pipe.

9. The CVD apparatus according to claim 5, wherein:

the inner pipe has a diameter no greater than about 2 millimeters.

10. The CVD apparatus according to claim 2, wherein:

the width between the insertion member and the outer pipe no greater than about 2 millimeters.

11. The CVD apparatus according to claim 1, wherein:

the compound channel portion includes a plurality of through-holes spaced apart from each other, the through-holes providing a plurality of passages for the source gas mixture.

12. The CVD apparatus according to claim 11, wherein:

the nozzle further includes a collecting region that extends from an outlet end of the compound channel region.

13. The CVD apparatus according to claim 11, wherein:

the respective through-holes of the compound channel portion are generally circular and have a diameter no greater than about 2 millimeters.

14. The CVD apparatus according to claim 1, wherein:

the compound channel portion has a length of at least 4 millimeters.

15. The CVD apparatus according to claim 1, wherein:

the process chamber includes a dome-shaped upper chamber having an open bottom and a lower chamber having an open top, the lower chamber being disposed below the upper chamber and including a substrate entry passage disposed at its sidewall,

the CVD apparatus further comprising a driving part configured for moving the substrate supporter between the lower and upper chambers.

16. The CVD apparatus according to claim 15, further comprising:

a plurality of nozzles arranged regularly around the lower chamber and oriented to direct the source gas mixture into the upper chamber.

17. The CVD apparatus according to claim 1, further comprising:

a gas injection part configured for injecting the source gas mixture into the process chamber,

wherein the injection pipe includes;

a main body having a closed outlet end, through which a gas passage having a first width is formed; and

an outlet region formed through a sidewall region of the main body near the outlet end, the outlet region having one or more injection ports configured for injecting the source gas mixture into the process chamber, the injection ports having a depth less than the width of the gas passage.

18. The CVD apparatus according to claim 17, wherein:

the injection ports comprise a plurality of through-holes spaced apart from each other.

19. The CVD apparatus according to claim 18, wherein:

each of the plurality of through-holes has a diameter no greater than about 2 millimeters.

20. The CVD apparatus according to claim 17, wherein:

the outlet region includes a first injection port and at least one second injection port, the second injection port including arcuate openings that generally surround the first injection port.

21. The CVD apparatus according to claim 20, wherein:

the first injection port has a width W₁ and the second injection ports have a width W₂ of at most 2 millimeters.

22. The CVD apparatus according to claim 17, wherein:

the outlet region has a thickness of at least 4 millimeters.

23. The CVD apparatus according to claim 17, wherein:

the outlet region includes an inner injection port, the inner injection port including generally arcuate openings arranged about a center point to define a generally ring-shaped inner injection port.

24. The CVD apparatus according to claim 23, wherein:

the outlet region further includes an outer injection port, the outer injection port including generally arcuate openings arranged about the center point to define a generally ring-shaped outer injection port that surrounds and is generally coaxial with the inner injection port.

25. The CVD apparatus according to claim 24, wherein:

the inner injection port has a width W₁ measured in a generally radial direction of no greater than about 2 millimeters and

the outer injection port has a width W₂ measured in a generally radial direction of no greater than about 2 millimeters.

26. The CVD apparatus according to claim 17, wherein:

the outlet end of the injection pipe extends in the direction of the reaction chamber further than the outlet end of the nozzle.

27. A chemical vapor deposition (CVD) apparatus for depositing a predetermined layer on a semiconductor substrate, comprising:

a process chamber;

a substrate supporter, arranged and configured for receiving and holding a substrate, disposed in the process chamber;

a plurality of nozzles arranged and configured for injecting source gas mixture into the process chamber; and

an upper electrode arranged and configured to apply sufficient power to the source gas mixture injected into the process chamber to excite source gas mixture into a plasma state,

wherein

each of the nozzles includes an outer pipe in which a through-hole provides a passage for the source gas mixture, an insertion member arranged within the through-hole at an outlet end of the outer pipe and spaced apart from an inner wall of the outer pipe, and a connection member configured for supporting and positioning the insertion member within the outer pipe, and further wherein the outer pipe is connected to a gas supply assembly; and

the insertion member extends along only a portion of the through-hole provided through the outer pipe.

28. The CVD apparatus according to claim 27, wherein:

each of the nozzles further includes at least one insertion pipe positioned within the outer pipe and surrounding the insertion member.

29. The CVD apparatus according to claim 27, wherein:

a space defined between an outer surface of the insertion member and an inner surface of the outer pipe is no greater than about 2 millimeters.

30. The CVD apparatus according to claim 27, wherein:

the insertion member is an inner pipe having a through-hole that provides a passage for the source gas mixture.

31. A plurality of nozzles used in a plasma processing apparatus to supply a source gas mixture to the apparatus, comprising:

an outer pipe in which a through-hole is formed to provide a passage for the source gas mixture;

an insertion member arranged within the through-hole at an outlet end of the outer pipe, the insertion member extending along a portion of the through-hole formed in outer pipe; and

an connection member configured for supporting and positioning the insertion member within the outer pipe.

32. The nozzles according to claim 31, wherein:

the insertion member is an inner pipe in which a through-hole is formed to provide a second passage for the source gas mixture.

33. The nozzles according to claim 32, wherein:

only one through-hole is formed in the center of the inner pipe.

34. The nozzles according to claim 33, wherein:

the through-hole of the inner pipe has a diameter no greater than about 2 millimeters.

35. The nozzles according to claim 31, wherein:

a space defined between an outer surface of the insertion member and an inner surface of the outer pipe is no greater than about 2 millimeters.

36. The nozzles according to claim 31, wherein:

one or more insertion pipes are arranged within the outer pipe and surround the insertion member.

37. The nozzles according to claim 36, wherein:

a width defined between an inner surface of the outer pipe and an outer surface of the insertion pipe is no greater than about 2 millimeters; and

a width defined between an inner surface of the insertion pipe and an outer surface of the insertion member is no greater than about 2 millimeters.

38. The nozzles according to claim 31, wherein:

the insertion member has a length of at least 4 millimeters.

39. An injection pipe used in a plasma processing apparatus to inject a source gas mixture into a reaction chamber, comprising:

a main body having a closed outlet end, through which a gas passage is formed; and

an outlet region formed through a sidewall region of the main body, the outlet region including at least one injection port configured for injecting the source gas mixture into the reaction chamber.

40. The injection pipe according to claim 39, wherein:

the injection port comprises a plurality of through-holes spaced apart from each other.

41. The injection pipe according to claim 40, wherein:

each of the plurality of through-holes of the injection port has a diameter no greater than about 2 millimeters.

42. The injection pipe according to claim 41, wherein:

the outlet region includes an inner injection port and at least one outer injection port, the outer injection port being arranged so as be substantially surrounding the inner injection port.

43. The injection pipe according to claim 39, wherein:

the inner injection port has a width no greater than about 2 millimeters and the outer injection port has a width no greater than about 2 millimeters.

44. The injection pipe according to claim 39, wherein:

the outlet region includes an inner injection port having generally arcuate openings arranged around a center point to define a generally ring-shaped inner injection port.

45. The injection pipe according to claim 44, wherein:

the outlet region includes at least one outer injection port having generally arcuate openings arranged around the center point to define a generally ring-shaped outer injection port that substantially surrounds the inner injection port.

46. The injection pipe according to claim 45, wherein:

the inner injection port has a width W₁ measured in a generally radial direction of no greater than about 2 millimeters and

the outer injection port has a width W₂ measured in a generally radial direction of no greater than about 2 millimeters.

47. The injection pipe according to claim 39, wherein:

the outlet region is formed through a sidewall portion that has a thickness at least 4 millimeters.

48. A chemical vapor deposition (CVD) apparatus comprising:

a process chamber;

a substrate supporter disposed in the process chamber for supporting a substrate;

a plurality of nozzles arranged and configured for injecting a source gas mixture into a lower region of the process chamber, each nozzle including a plurality of outlet channels, each of the outlet channels being arranged and configured so as to suppress formation of the plasma within the nozzle;

a plurality of injection pipes arranged and configured for injecting the source gas mixture into an upper region of the process chamber, each of the injection pipes including a transfer region and an outlet region, the outlet regions including a thickened sidewall through which an injection port is provided for directing the source gas mixture into the upper region of the process chamber, the injection port being arranged and configured so as to suppress formation of the plasma within the injection pipe; and

an energy source configured for applying sufficient energy to the source gas mixture within the process chamber to form a plasma.

49. A CVD apparatus according to claim 48, wherein:

the plurality of nozzles are connected to a first source gas mixture supply, the nozzles being arranged in a generally circumferential fashion around the substrate supporter for directing the first source gas mixture into a lower region of the process chamber; and

the plurality of injection pipes connected a second source gas mixture supply, the injection pipes arranged in a generally circumferential fashion around the substrate supporter for directing the second source gas mixture into a upper region of the process chamber.

50. A CVD apparatus according to claim 49, wherein:

the first source gas mixture and the second source gas mixture are substantially identical.

51. A nozzle supplying a source gas mixture into a plasma processing apparatus, comprising:

a single channel portion in which a passage of the source gas mixture is formed, the single channel portion being connected to a gas supply assembly; and

a compound channel portion in which a plurality of passages extending from the passage of the single channel portion are formed,

wherein the respective passages of the compound channel portion are narrower than the passage of the single channel portion, and the compound channel portion has a length sufficient to prevent the source mixture from being excited in the single channel portion.

52. The nozzle according to claim 51, wherein:

the length of the compound channel portion is at least 4 millimeters.

53. A nozzle configured for supplying a source gas mixture into a plasma processing apparatus, comprising:

a single channel portion connected to a gas supply assembly; and

a compound channel portion extending from the single channel portion,

wherein the source gas mixture is injected into the plasma processing apparatus through a passage formed at the single channel portion and a passage formed at the compound channel portion, the passage formed at the compound channel portion being narrower than the passage formed at the single channel portion for suppressing reaction of the source gas mixture within the nozzle.

54. The nozzle according to claim 53, wherein:

a length of the compound channel portion is at least 4 millimeters.

56. The nozzle according to claim 54, wherein:

the length of the insertion member is at least 4 millimeters.

55. A nozzle supplying a source gas mixture into a plasma processing apparatus, comprising:

an outer pipe in which a through-hole is formed, the through-hole being connected to a gas supply assembly; and

an insertion member inserted into the through-hole of the outer pipe to supply the source gas mixture flowing along the through-hole into the plasma processing apparatus through a plurality of divided portions,

wherein the insertion member is located in a region adjacent to a terminal of the outer pipe and has a length sufficient to prevent the source mixture from being excited in the single channel portion.

57. A nozzle supplying a source gas mixture into a plasma processing apparatus, comprising:

an outer pipe in which a through-hole is formed, the through-hole being connected to a gas supply assembly; and

an insertion member inserted into the through-hole of the outer pipe, adjacent to a terminal of the outer pipe, the insertion member dividing the through-hole of the outer pipe into a plurality of narrow portions for suppressing reaction of the source gas mixture within the nozzle.

58. The nozzle according to claim 57, wherein:

a length of the compound channel portion is at least 4 millimeters.

59. A method for supplying a source gas mixture into a plasma processing apparatus, comprising:

flowing the source gas mixture through a single channel portion of a nozzle in which a passage connected to a gas supply assembly is formed;

flowing the source gas mixture through a compound channel portion of the nozzle having a passage which is narrower than a passage of the single channel portion; and

injecting the source gas mixture to the plasma processing apparatus,

wherein the compound channel portion has a length sufficient to prevent the source mixture from being excited in the single channel portion.

60. The method according to claim 59, wherein:

the making the source gas mixture flow through the compound channel portion of the nozzle having the passage which is narrower than the passage of the single channel portion includes making the source gas mixture flow more than 4 millimeters therein.

61. A method for supplying a source gas mixture into a plasma processing apparatus, comprising:

flowing the source gas mixture along a through-hole formed at a nozzle connected to a gas supply assembly;

flowing the source gas mixture from the through-hole to a plurality of portions branching to be narrower than the through-hole; and

injecting the source gas mixture to the plasma processing apparatus,

wherein the branching portions have a length sufficient to prevent the source gas mixture from being excited at an internal portion of the through-hole

62. The method according to claim 61, wherein:

the making the source gas mixture flow from the through-hole to a plurality of portions branching to be narrower than the through-hole includes making the source gas mixture flow more than 4 millimeters therein.