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Plasma chemical vapor deposition apparatus having an improved nozzle configuration

  • US 20050092245A1
  • Filed: 08/16/2004
  • Published: 05/05/2005
  • Est. Priority Date: 11/03/2003
  • Status: Abandoned Application
First Claim
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1. A chemical vapor deposition (CVD) apparatus comprising:

  • a process chamber;

    a substrate supporter, arranged and configured for supporting a substrate, disposed within the process chamber to support a substrate;

    a gas injection part arranged and configured for injecting a source gas mixture into the process chamber through a nozzle; and

    an energy source configured for applying sufficient energy to the source gas mixture within the process chamber to form a plasma, wherein the nozzle includes;

    a single channel portion through which a single passage for the source gas mixture is formed, the single channel portion being connected to a gas supply assembly; and

    a compound channel portion through which two or more passages for the source gas mixture is formed, the compound channel portion extending from the single channel portion to an outlet portion, wherein the respective passages of the compound channel portion are each configured to have a width Wc smaller than a width Wp of the passage of the single channel portion, the width Wc being sized for suppressing reaction of the source gas mixture within the nozzle.

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