Apparatus and method for a low voltage bandgap voltage reference generator

• US 20050093531A1
• Filed: 06/30/2004
• Published: 05/05/2005
• Est. Priority Date: 08/28/2003
• Status: Abandoned Application

• Current Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Original Assignee: Broadcom Corporation (Broadcom, Inc.)
• Inventors: Vorenkamp, Pieter, Gopinathan, Venugopal
• Application Number:
  US10/878,994
• Publication Number:
  US 20050093531A1
• Time in Patent Office: Days
• US Class Current: 323/316
• CPC Class Codes: G05F 3/30 Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities G05F3/26 takes precedence

Abstract

A bandgap voltage generator generates an output reference voltage and is configured to operate from a low voltage power supply and consumes low power. The bandgap voltage generator includes a non-cascode current mirror that is directly connected to a power supply input and that produces current mirror outputs in response to the power supply input. A differential amplifier senses two of the current mirror outputs, and generates an output that controls the non-cascode current mirror so that the current mirror outputs produce substantially the same current and voltage at the sensed current mirror outputs. A bandgap core circuit includes first and second bipolar devices that receive the constant current from the two current mirror outputs. The first bipolar device is scaled in size relative to the second bipolar device so as to produce an output voltage at a third current mirror output that is multiple of the characteristic bandgap voltage of the bipolar devices. The non-cascode current mirror includes FET devices having their respective sources connected to the power supply input, and having their respective drains connected to the respective current mirror outputs. The FETs are not implemented with a cascode configuration, so that the bandgap voltage generator can operate with a low voltage power supply and also consumes low power.

Claims

1. A bandgap voltage generator, comprising:

a non-cascode current mirror that is connected to a power supply input and that produces a plurality of current mirror outputs in response to said power supply input and a control input;

a differential amplifier for sensing first and second current mirror outputs of said non-cascode current mirror, and having an output responsive thereto that controls said non-cascode current mirror using said control input so that said current mirror outputs have substantially the same current and voltage;

a first bipolar device connected to a first current mirror output through a first resistor;

a second bipolar device connected to a second current mirror output; and

a third bipolar device connected to a third current mirror output through a second resistor, said third current mirror output producing a reference output voltage responsive to said power supply input.

2. The bandgap voltage generator of claim 1, wherein said non-cascode current mirror includes a plurality of transistors having first terminals connected to the power supply input, and second terminals connected to respective current mirror outputs, and having respective control terminals connected to said control input of said non-cascode current mirror.

3. The bandgap voltage generator of claim 1, wherein said non-cascode current mirror includes a plurality of FETs having their respective sources connected to said power supply input, and having their respective drains connected to respective current mirror outputs, and having their respective gates connected said output of said differential amplifier though said control input.

4. The bandgap voltage generator of claim 3, wherein a first FET of said plurality of FETs has its drain connected to said first current mirror output, and a second FET of said plurality of FETs has its drain connected to said second current mirror output, and a third FET of said plurality of FETs has its drain to connected to said third current mirror output.

5. The bandgap voltage generator of claim 1, wherein said second bipolar device is scaled relative to said first bipolar device.

7. The bandgap voltage generator of claim 1, wherein a voltage at said third current mirror output is based on a characteristic bandgap voltage of silicon.

8. The bandgap voltage generator of claim 7, wherein said voltage at said third current mirror output is a multiple of said bandgap voltage of said bipolar devices, said multiple dependent on a relative size ratio of said first bipolar device to said second bipolar device.

9. The bandgap voltage generator of claim 8, wherein said voltage at said third current mirror output is also based on a resistance ratio of said first resistor relative to said second resistor.

10. The bandgap voltage generator of claim 1, wherein said bipolar devices are diode connected transistors.

23. The bandgap voltage generator of claim 1, wherein respective bases and collectors of said first, second, and third bipolar devices are connected to a common voltage.

24. The bandgap voltage generator of claim 23, wherein said common voltage is ground.

25. The bandgap voltage generator of claim 7, wherein said voltage at said third current mirror output is a multiple of said bandgap voltage of said bipolar devices, said multiple dependent on a ratio of said first resistor to said second resistor.

6. The bandgap voltage generator of 5, wherein said second resistor is scaled relative to said first resistor.

11. A method of generating a reference voltage, comprising:

directly receiving current from a power supply source;

generating a plurality of current outputs responsive to said power supply source, including the step of mirroring a first current output to generate a second current output;

sensing a voltage at said first and second current outputs, and controlling the step of mirroring to maintain a constant current and voltage at said first and second current outputs;

receiving said constant currents at respective first and second bipolar devices, the first and second bipolar devices having a characteristic bandgap voltage; and

generating an output reference voltage that is based on said characteristic bandgap voltage.

12. The method of claim 11, wherein said output reference voltage is a multiple of said characteristic bandgap voltage.

13. The method of claim 11, wherein the step of sensing includes the step of determining a difference between voltages at said current outputs, and the step of controlling includes the step of adjusting the step of current mirroring to reduce said difference between voltages at said first and second current outputs.

14. The method of claim 11, wherein the step of mirroring is performed without performing voltage regulation.

15. The method of claim 11, wherein the step of mirroring is performed by a non-cascoded circuit.

16. A bandgap voltage generator, comprising:

a non-cascode current mirror that is connected to a power supply and that produces a first, second, and third current mirror outputs in response to said power supply;

means for controlling said non-cascode current mirror so that said first and second current mirror outputs each produce a substantially constant current; and

a bandgap core circuit having first and second bipolar devices that receive said substantially constant currents from said first and second current mirror outputs;

said first and second bipolar devices having a characteristic bandgap voltage, and said first bipolar device scaled relative to said second bipolar device so as to produce an output voltage at said third current mirror output that is multiple of said characteristic bandgap voltage based on a size ratio of said first bipolar device to said second bipolar device.

17. The bandgap voltage generator of claim 16, wherein a voltage drop from said power supply to said first and second current mirror outputs is approximately equivalent to a voltage drop across a single biased transistor device.

18. The bandgap voltage generator of claim 17, wherein said voltage drop from said power supply to said first and second current mirror outputs is approximately equivalent to a single drain-to-source voltage drop across a single biased FET device.

19. The bandgap voltage generator of claim 16, wherein said non-cascode current mirror includes a plurality of transistors having first terminals connected to said power supply input, and second terminals connected to respective current mirror outputs, and having respective control terminals connected to said means for controlling said non-cascode current mirror.

20. The bandgap voltage generator of claim 19, wherein said second terminals are connected to said respective current mirror outputs without intervening transistors connected between said second terminals and said current mirror outputs.

21. The bandgap voltage generator of claim 16, wherein said non-cascode current mirror includes a plurality of FETs having their respective sources connected to said power supply input, and having their respective drains connected to respective current mirror outputs, and having their respective gates connected to said means for controlling.

22. The bandgap voltage generator of claim 21, wherein said respective drains are connected to said respective current mirror outputs without intervening transistors connected between said respective drains and said current mirror outputs.