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Plasma enhanced ALD of tantalum nitride and bilayer

  • US 20050095443A1
  • Filed: 10/31/2003
  • Published: 05/05/2005
  • Est. Priority Date: 10/31/2003
  • Status: Active Grant
First Claim
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1. A method for forming a tantalum nitride layer on a substrate, the method comprising:

  • depositing the layer on the substrate by plasma enhanced atomic layer deposition of a tantalum halide precursor in the presence of a hydrogen plasma and a nitrogen plasma.

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