Method of film-forming transparent electrode layer and device therefor

• US 20050095809A1
• Filed: 07/12/2002
• Published: 05/05/2005
• Est. Priority Date: 07/18/2001
• Status: Abandoned Application

• Current Assignee: Honda Giken Kogyo Kabushiki Kaisha (Honda Motor Company)
• Original Assignee: Honda Giken Kogyo Kabushiki Kaisha (Honda Motor Company)
• Inventors: Nakayama, Yuji, Shiozaki, Satoshi
• Application Number:
  US10/483,925
• Publication Number:
  US 20050095809A1
• Time in Patent Office: Days
• US Class Current: 438/454
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/3464 using more than one target C23C14/56 takes precedence
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A method and apparatus for forming a transparent electrode layer of a thin-film compound semiconductor solar cell by using only a direct-current sputtering system, wherein a preliminary layer is formed in a first process by direct-current sputtering from a target by supplying thereto a specified low electric power preset so as not to damage the substrate by sputters and a complete layer is deposited thereon in a second process by sputtering from the same target by supplying a high electric power. The same layer is also formed by direct-current sputtering from a pair of oppositely disposed targets of the same material. The method and apparatus are capable of easily forming a high quality transparent electrode layer at an increased speed.

Claims

1. A transparent electrode layer forming method of forming a transparent electrode layer of a thin film compound semiconductor solar cell by a sputtering method, wherein the transparent electrode layer is formed by two direct-current sputtering processes:

the first process forms a precursory layer having a thickness in a range of 650 Å

to 1500 Å

by applying a specified low electric power to a target and the second process forms a complete transparent electrode layer by applying a specified high electric power to the same target.

2. A transparent electrode layer forming method as defined in claim 1, characterized in that the low electric power to be supplied to the target in the first direct-current sputtering process is of 0.6 to 2.1 W per 1 cm² of the target surface and the high electric power to be supplied to the target in the second direct-current sputtering process is of 2.1 to 10.4 W per 1 cm² of the target surface.

3. A transparent electrode layer forming method as defined in claim 1, characterized in that the first sputtering process forms the precursory layer of having a thickness smaller than that of a final layer deposited by the second sputtering process.

4. A transparent electrode layer forming method as defined in claim 1, characterized in that a substrate having a molybdenum (Mo) electrode layer, a p-type light-absorbing layer and a n-type buffer layer formed thereon subsequently in the described order is used as a base material and a transparent electrode layer of ZnO group is formed on the buffer layer of the substrate by using a target of ZnO:

X (with X being Ga, Al, In or B) group material.

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11. A transparent electrode layer forming method of forming a transparent electrode layer of a thin film compound semiconductor solar cell by a sputtering method, wherein the transparent electrode layer is formed by two processes:

a first process forms a precursory layer having a thickness in a range of 650 Å

to 1500 Å

by sputtering from a pair of oppositely disposed targets of the same material and a second process forms a complete transparent electrode layer by dc sputtering from a single target by supplying thereto high electric power.

12. (canceled)

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