Semiconductor device and manufacturing method thereof

• US 20050095842A1
• Filed: 11/01/2004
• Published: 05/05/2005
• Est. Priority Date: 11/04/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamaguchi, Tetsuji, Ishikawa, Akira
• Granted Patent: US 7,170,176 B2
• Time in Patent Office: Days
• US Class Current: 438/625
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT

Abstract

A technology for easily forming a multi-layer wiring structure that is fine and reliable. In the multi-layer wiring structure, the lower-layer wiring and the upper-layer wiring that are formed to sandwich an insulating layer are electrically connected to each other in a projection formed in the lower-layer wiring. The projection includes a columnar conductive member and the upper and lower layers thereof and each of the lower layer and the upper layer is formed of a conductive layer formed over the entire lower-layer wiring. The upper-layer is electrically connected to the lower-layer wiring in the portion where the projection is exposed substantially on the same plane as the top surface of the insulating layer.

Claims

1. A semiconductor device comprising:

a first wiring having a projection over an insulating surface, comprising;

a first conductive layer;

a second conductive layer formed over the first conductive layer and in the projection; and

a third conductive layer formed over the first conductive layer and the second conductive layer;

an insulating layer over the first wiring; and

a second wiring over the insulating layer,

wherein the first wiring is electrically connected to the second wiring at the projection through a hole in the insulating layer.

6. A semiconductor device according to claim 1,

wherein the second conductive layer comprises aluminum as its main component.

11. A semiconductor device according to claim 1,

wherein the first and the third conductive layers comprise a metal material selected from titanium, tantalum and tungsten.

16. A semiconductor device according to claim 1,

wherein the first and the third conductive layers comprise a nitride of a metal material selected from titanium, tantalum and tungsten.

21. A semiconductor device according to claim 1,

wherein the first wiring is electrically connected to the second wiring in a portion where the projection is exposed substantially on a same plane as a top surface of the insulating layer.

35. An electronic appliance comprising the semiconductor device according to claim 1, wherein the electronic appliance is one selected from the group consisting of a television receiving set, a laptop personal computer, and an image reproducing device.

2. A semiconductor device comprising:

a first insulating layer having a contact hole;

a first wiring having a projection over the first insulating layer, comprising;

a first conductive layer;

a second conductive layer formed over the first conductive layer and in the projection; and

a third conductive layer formed over the first conductive layer and the second conductive layer;

a second insulating layer over the first wiring; and

a second wiring over the second insulating layer,

wherein the first wiring is electrically connected to the second wiring at the projection through a hole in the second insulating film, and

wherein the contact hole is filled with a material that is identical to a material contained in the second conductive layer.

7. A semiconductor device according to claim 2,

wherein the second conductive layer comprises aluminum as its main component.

12. A semiconductor device according to claim 2,

wherein the first and the third conductive layers comprise a metal material selected from titanium, tantalum and tungsten.

17. A semiconductor device according to claim 2,

wherein the first and the third conductive layers comprise a nitride of a metal material selected from titanium, tantalum and tungsten.

22. A semiconductor device according to claim 2,

wherein the first wiring is electrically connected to the second wiring in a portion where the projection is exposed substantially on a same plane as a top surface of the second insulating layer.

36. An electronic appliance comprising the semiconductor device according to claim 2, wherein the electronic appliance is one selected from the group consisting of a television receiving set, a laptop personal computer, and an image reproducing device.

3. A semiconductor device comprising:

a first insulating layer having a contact hole;

a first conductive layer formed over a top surface of the first insulating layer and in the contact hole;

a second conductive layer filling the contact hole;

a third conductive layer over a portion of the first conductive layer;

a fourth conductive layer over the first, the second and the third conductive layers;

a second insulating layer over the fourth conductive layer; and

a fifth conductive layer over the second insulating layer,

wherein a projection is formed by the first, the third and the fourth conductive layers in a portion where the first, the third and the fourth conductive layers are overlapped, and

wherein the fourth conductive layer is electrically connected to the fifth conductive layer through a hole in the second insulating layer.

8. A semiconductor device according to claim 3,

wherein the third conductive layer comprises aluminum as its main component.

13. A semiconductor device according to claim 3,

wherein the first and the fourth conductive layers comprise a metal material selected from titanium, tantalum and tungsten.

18. A semiconductor device according to claim 3,

wherein the first and the fourth conductive layers comprise a nitride of a metal material selected from titanium, tantalum and tungsten.

37. An electronic appliance comprising the semiconductor device according to claim 3, wherein the electronic appliance is one selected from the group consisting of a television receiving set, a laptop personal computer, and an image reproducing device.

4. A semiconductor device comprising:

a thin film transistor comprising;

a semiconductor layer;

a gate insulating film; and

a gate electrode;

a first insulating layer having a contact hole over the thin film transistor;

a first conductive layer formed over a top surface of the first insulating layer and in the contact hole;

a second conductive layer filling the contact hole;

a third conductive layer over a portion of the first conductive layer;

a fourth conductive layer over the first, the second and the third conductive layers;

a second insulating layer over the fourth conductive layer; and

a fifth conductive layer over the second insulating layer,

wherein a projection is formed by the first, the third and the fourth conductive layers in a portion where the first, the third and the fourth conductive layers are overlapped, and

wherein the fourth conductive layer is electrically connected to the fifth conductive layer through a hole in the second insulating layer.

9. A semiconductor device according to claim 4,

wherein the third conductive layer comprises aluminum as its main component.

14. A semiconductor device according to claim 4,

wherein the first and the fourth conductive layers comprise a metal material selected from titanium, tantalum and tungsten.

19. A semiconductor device according to claim 4,

wherein the first and the fourth conductive layers comprise a nitride of a metal material selected from titanium, tantalum and tungsten.

24. A semiconductor device according to claim 4,

wherein the gate insulating film is formed over the semiconductor layer, and

wherein the gate electrode is formed over the gate insulating film.

27. A semiconductor device according to claim 4,

wherein the gate insulating film is formed over the gate electrode, and

wherein the semiconductor layer is formed over the gate insulating film.

38. An electronic appliance comprising the semiconductor device according to claim 4, wherein the electronic appliance is one selected from the group consisting of a television receiving set, a laptop personal computer, and an image reproducing device.

5. A semiconductor device comprising:

a thin film transistor comprising;

a semiconductor layer;

a gate insulating film; and

a gate electrode;

a first insulating layer having a contact hole over the thin film transistor;

a first conductive layer formed over a top surface of the first insulating layer and in the contact hole;

a second conductive layer filling the contact hole;

a third conductive layer over a portion of the first conductive layer;

a fourth conductive layer over the first, the second and the third conductive layers;

a second insulating layer over the fourth conductive layer; and

a fifth conductive layer over the second insulating layer;

a light emitting layer over the fifth conductive layer; and

a sixth conductive layer over the light emitting layer,

wherein the first conductive layer is electrically connected to the semiconductor layer,

wherein a projection is formed by the first, the third and the fourth conductive layers in a portion where the first, the third and the fourth conductive layers are overlapped, and

wherein the fourth conductive layer is electrically connected to the fifth conductive layer through a hole in the second insulating layer.

10. A semiconductor device according to claim 5,

wherein the third conductive layer comprises aluminum as its main component.

15. A semiconductor device according to claim 5,

wherein the first and the fourth conductive layers comprise a metal material selected from titanium, tantalum and tungsten.

20. A semiconductor device according to claim 5,

wherein the first and the fourth conductive layers comprise a nitride of a metal material selected from titanium, tantalum and tungsten.

25. A semiconductor device according to claim 5,

wherein the gate insulating film is formed over the semiconductor layer, and

wherein the gate electrode is formed over the gate insulating film.

28. A semiconductor device according to claim 5,

wherein the gate insulating film is formed over the gate electrode, and

wherein the semiconductor layer is formed over the gate insulating film.

31. A semiconductor device according to claim 5,

wherein the fifth conductive layer is an anode of a light emitting element, and

wherein the sixth conductive layer is a cathode of the light emitting element.

34. A semiconductor device according to claim 5,

wherein the fifth conductive layer is a cathode of a light emitting element, and

wherein the sixth conductive layer is an anode of the light emitting element.

39. An electronic appliance comprising the semiconductor device according to claim 5, wherein the electronic appliance is one selected from the group consisting of a television receiving set, a laptop personal computer, and an image reproducing device.

23. (canceled)

26. (canceled)

29-30. -30. (canceled)

32-33. -33. (canceled)

40. A manufacturing method of a semiconductor device, comprising the steps of:

forming a first conductive film over an insulating surface;

forming a first mask over the first conductive film;

performing a first etching to the first conductive film using the first mask;

stopping the first etching in a condition where at least a part of the first conductive film remains over the insulating surface;

forming a second conductive film over the remaining first conductive film and the insulating surface;

forming a hard mask layer over the second conductive film;

forming a second mask over the second conductive film;

performing a second etching to the second conductive film;

stopping the second etching in a condition where at least a part of the second conductive film remains over the insulating surface;

removing the second mask; and

removing at least the second conductive film that remains over the insulating surface and that is not covered by the hard mask layer.

42. A manufacturing method of a semiconductor device according to claim 40,

wherein the first conductive film comprises a first layer formed of a metal having a high melting point selected from titanium, tantalum and tungsten, or nitride of the metal having a high melting point, and a second layer formed of aluminium or a metal material containing aluminium as its main component.

41. A manufacturing method of a semiconductor device, comprising the steps of:

forming a first insulating film over an insulating surface;

forming a contact hole in the first insulating film;

forming a first conductive film comprising a first conductive material over the first insulating film and in the contact hole;

performing a heat treatment so that the contact hole in the first insulating film is filled with the first conductive material;

forming a first mask over the first conductive film;

performing a first etching to the first conductive film;

stopping the first etching in a condition where at least a part of the first conductive film remains over the first insulating film and the first conductive material fills the contact hole,

forming a second conductive film over the remaining first conductive film and the first insulating film;

forming a hard mask layer over the second conductive film;

forming a second mask over the second conductive film;

performing a second etching to the second conductive film;

stopping the second etching in the condition where at least a part of the second conductive film remains over the first insulating film;

removing the second mask; and

removing at least the second conductive film that remains over the first insulating film and that is not covered with the hard mask layer.

43. A manufacturing method of a semiconductor device according to claim 41,

wherein the first conductive film comprises a first layer formed of a metal having a high melting point selected from titanium, tantalum and tungsten, or nitride of the metal having a high melting point, and a second layer formed of aluminium or a metal material containing aluminium as its main component.