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Semiconductor device and manufacturing method thereof

  • US 20050095842A1
  • Filed: 11/01/2004
  • Published: 05/05/2005
  • Est. Priority Date: 11/04/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first wiring having a projection over an insulating surface, comprising;

    a first conductive layer;

    a second conductive layer formed over the first conductive layer and in the projection; and

    a third conductive layer formed over the first conductive layer and the second conductive layer;

    an insulating layer over the first wiring; and

    a second wiring over the insulating layer, wherein the first wiring is electrically connected to the second wiring at the projection through a hole in the insulating layer.

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