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GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same

  • US 20050095861A1
  • Filed: 11/29/2004
  • Published: 05/05/2005
  • Est. Priority Date: 05/13/2002
  • Status: Abandoned Application
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1-11. -11. (canceled)

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