Apparatus for single-wafer-processing type CVD
First Claim
1. A single-wafer-processing type CVD apparatus for forming a film on a semiconductor wafer, comprising:
- a reaction chamber comprising;
(i) a susceptor disposed therein for placing and heating a wafer, wherein at least one gas discharge hole is provided in the susceptor to flow a gas into the reaction chamber via a back side and a periphery of the wafer into the reaction chamber, said susceptor being movable vertically;
(ii) a showerhead disposed inside the reaction chamber opposed to and parallel to the susceptor for emitting a jet of reaction gas toward the wafer;
(iii) an exhaust duct positioned in the vicinity of the showerhead and provided circularly along a inner wall of the reaction chamber; and
(iv) a circular separation plate provided coaxially with the exhaust duct to form a clearance with a bottom of the exhaust duct, said separation plate having a sealing portion to seal a periphery of the susceptor when the susceptor rises, thereby separating the reaction chamber from a wafer-handling chamber configured to be disposed under the reaction chamber; and
a temperature-controlling apparatus for regulating the temperature of the showerhead at a given temperature.
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Abstract
A single-wafer-processing type CVD apparatus includes: (a) a reaction chamber including: (i) a susceptor having at least one gas discharge hole to flow a gas into the reaction chamber via a back side and a periphery of the wafer into the reaction chamber; (ii) a showerhead; (iii) an exhaust duct positioned in the vicinity of the showerhead and provided circularly along an inner wall of the reaction chamber; and (iv) a circular separation plate provided coaxially with the exhaust duct to form a clearance with the bottom of the exhaust duct; and (b) a temperature-controlling apparatus for regulating the temperature of the showerhead. The separation plate has a sealing portion to seal a periphery of the susceptor and to separate the reaction chamber from a wafer-handling chamber when the susceptor rises.
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Citations
13 Claims
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1. A single-wafer-processing type CVD apparatus for forming a film on a semiconductor wafer, comprising:
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a reaction chamber comprising;
(i) a susceptor disposed therein for placing and heating a wafer, wherein at least one gas discharge hole is provided in the susceptor to flow a gas into the reaction chamber via a back side and a periphery of the wafer into the reaction chamber, said susceptor being movable vertically;
(ii) a showerhead disposed inside the reaction chamber opposed to and parallel to the susceptor for emitting a jet of reaction gas toward the wafer;
(iii) an exhaust duct positioned in the vicinity of the showerhead and provided circularly along a inner wall of the reaction chamber; and
(iv) a circular separation plate provided coaxially with the exhaust duct to form a clearance with a bottom of the exhaust duct, said separation plate having a sealing portion to seal a periphery of the susceptor when the susceptor rises, thereby separating the reaction chamber from a wafer-handling chamber configured to be disposed under the reaction chamber; and
a temperature-controlling apparatus for regulating the temperature of the showerhead at a given temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A single-wafer-processing type CVD apparatus for forming a film on a semiconductor wafer, comprising:
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a reaction chamber comprising;
(i) a susceptor disposed therein for placing and heating a wafer, wherein at least one gas discharge hole is provided in the susceptor to flow a gas into the reaction chamber via a periphery of the wafer into the reaction chamber, said susceptor being movable vertically;
(ii) a showerhead disposed inside the reaction chamber opposed to and parallel to the susceptor for emitting a jet of reaction gas toward the wafer;
(iii) an exhaust duct positioned in the vicinity of the showerhead and provided circularly along a inner wall of the reaction chamber; and
(iv) a circular separation plate provided coaxially with the exhaust duct to form a clearance with a bottom of the exhaust duct, said separation plate having a sealing portion to seal a periphery of the susceptor when the susceptor rises, thereby separating the reaction chamber from a wafer-handling chamber configured to be disposed under the reaction chamber, said circular separation plate having an inner circumference inside the sealing portion to cover the at least one gas discharge hole; and
a temperature-controlling apparatus for regulating the temperature of the showerhead at a given temperature. - View Dependent Claims (13)
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Specification