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Apparatus for single-wafer-processing type CVD

  • US 20050098111A1
  • Filed: 12/16/2004
  • Published: 05/12/2005
  • Est. Priority Date: 04/12/2002
  • Status: Abandoned Application
First Claim
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1. A single-wafer-processing type CVD apparatus for forming a film on a semiconductor wafer, comprising:

  • a reaction chamber comprising;

    (i) a susceptor disposed therein for placing and heating a wafer, wherein at least one gas discharge hole is provided in the susceptor to flow a gas into the reaction chamber via a back side and a periphery of the wafer into the reaction chamber, said susceptor being movable vertically;

    (ii) a showerhead disposed inside the reaction chamber opposed to and parallel to the susceptor for emitting a jet of reaction gas toward the wafer;

    (iii) an exhaust duct positioned in the vicinity of the showerhead and provided circularly along a inner wall of the reaction chamber; and

    (iv) a circular separation plate provided coaxially with the exhaust duct to form a clearance with a bottom of the exhaust duct, said separation plate having a sealing portion to seal a periphery of the susceptor when the susceptor rises, thereby separating the reaction chamber from a wafer-handling chamber configured to be disposed under the reaction chamber; and

    a temperature-controlling apparatus for regulating the temperature of the showerhead at a given temperature.

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