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Method of fabricating vertical structure LEDs

  • US 20050098792A1
  • Filed: 12/03/2004
  • Published: 05/12/2005
  • Est. Priority Date: 04/09/2002
  • Status: Active Grant
First Claim
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1. A light-emitting device, comprising:

  • a metal layer;

    a GaN contact layer adjacent the metal layer;

    a GaN buffer layer;

    a light-emitting layer disposed between the GaN contact layer and the GaN buffer layer; and

    an ohmic contact on the GaN buffer layer.

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