Inductor formed in an integrated circuit
First Claim
1. A method for forming an inductor in a semiconductor integrated circuit, the method comprising:
- forming a conductive line in a metallization layer;
forming a dielectric layer overlying the conductive line;
forming a trench in the dielectric layer; and
forming a conductive runner in the trench, wherein the conductive runner is in conductive communication with the conductive line, and wherein the conductive line and the conductive runner cooperate to produce an inductive effect.
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Accused Products
Abstract
An inductor formed within an integrated circuit and a method for forming the inductor. The inductor comprises an underlying layer of aluminum formed in a first metallization layer and patterned and etched into the desired shape. In one embodiment the aluminum line comprises a spiral shape. According to a damascene process, a conductive runner, preferably of copper, is formed in a dielectric layer overlying the aluminum line and in electrical contact therewith. The aluminum line and the conductive runner cooperate to form the inductor. In another embodiment the aluminum line and the conductive runner are formed in a vertically spaced-apart orientation, with tungsten plugs or conductive vias formed to provide electrical connection therebetween. A method for forming the inductor comprises forming an aluminum conductive line and forming a conductive runner over the conductive line.
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Citations
48 Claims
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1. A method for forming an inductor in a semiconductor integrated circuit, the method comprising:
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forming a conductive line in a metallization layer;
forming a dielectric layer overlying the conductive line;
forming a trench in the dielectric layer; and
forming a conductive runner in the trench, wherein the conductive runner is in conductive communication with the conductive line, and wherein the conductive line and the conductive runner cooperate to produce an inductive effect. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for forming an inductor in a semiconductor integrated circuit, the method comprising:
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forming a conductive line in a metallization layer;
forming a first dielectric layer overlying the conductive line;
forming conductive structures in the first dielectric layer;
forming a conductive pad overlying and in electrical communication with one of the conductive structures and a terminal end of the conductive line;
forming a second dielectric layer overlying the first dielectric layer and the conductive pad;
forming a trench in the second dielectric layer; and
forming a conductive runner in the trench, wherein the conductive runner is in conductive communication with the conductive line through the conductive structures, and wherein the conductive line and the conductive runner cooperate to produce an inductive effect. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. An integrated circuit comprising an inductor formed therein, the integrated circuit comprising:
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a substrate;
a plurality of material layers overlying the substrate;
a conductive line disposed in a first metallization layer; and
a conductive runner disposed in a second metallization layer above the first metallization layer and in substantially vertical alignment and physical contact with the conductive line, wherein the conductive line and the conductive runner cooperate to produce an inductive effect. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. An integrated circuit comprising an inductor formed therein, the integrated circuit comprising:
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a substrate;
a plurality of material layers overlying the substrate;
a conductive line disposed in a first metallization layer;
conductive structures disposed in a first dielectric layer overlying the first metallization layer; and
a conductive runner disposed in a second metallization layer overlying the first dielectric layer, wherein the conductive runner is in substantially vertical alignment with the conductive line, wherein the conductive line and the conductive runner conductively connected by the conductive structures cooperate to produce an inductive effect. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 41, 43)
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42. An integrated circuit comprising:
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a semiconductor substrate comprising active regions therein;
a plurality of dielectric layers overlying the substrate;
a plurality of metallization layers alternating with the plurality of dielectric layers wherein a first one of the plurality of metallization layers comprises a conductive line; and
a conductive runner formed in a second one of the plurality of metallization layers, wherein the conductive runner is in conductive communication with the conductive line, and wherein the conductive runner and the conductive line cooperate to produce an inductive effect. - View Dependent Claims (44, 45, 46, 47, 48)
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Specification