Semiconductor device having overcurrent protection function and data setting method thereof

• US 20050099751A1
• Filed: 06/08/2004
• Published: 05/12/2005
• Est. Priority Date: 11/12/2003
• Status: Abandoned Application

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation), Renesas Device Design Corp.
• Inventors: Kumagai, Toshiyuki
• Application Number:
  US10/862,627
• Publication Number:
  US 20050099751A1
• Time in Patent Office: Days
• US Class Current: 361/100
• CPC Class Codes: H03K 17/0828 in composite switches
• CPC Class Codes: H03K 2017/0806 against excessive temperature

Abstract

In a driving device (20) for driving an IGBT (1), a current measuring portion (22) measures a main current amount flowing through the IGBT (1). When the main current amount measured by the current measuring portion (22) reaches a predetermined reference level, a protection circuit portion (23) limits the main current at the IGBT (1) to protect it. A temperature measuring portion (24) measures the temperature of the IGBT (1). The control portion (25) adjusts the aforementioned reference level based on the temperature of the IGBT (1) measured by the temperature measuring portion (24). A control portion (35) stores setting values of the reference level as data.

Claims

1. A semiconductor device for driving a predetermined switching element and having a protection function preventing an overcurrent from flowing through said switching element, said semiconductor device comprising:

a current measuring portion for measuring an amount of current flowing through said switching element;

a protection circuit portion for limiting said current flowing through said switching element when said amount of said current measured by said current measuring portion reaches a predetermined reference level for detecting said overcurrent, thereby protecting said switching element;

a temperature measuring portion for measuring the temperature of said switching element; and

a control portion for adjusting said reference level based on said temperature of said switching element measured by said temperature measuring portion;

wherein said reference level is predetermined in correspondent to said temperature of said switching element on the assumption that said temperature changes, and

said control portion adjusts said reference level in correspondent to said measured temperature.

2. The semiconductor device according to claim 1, wherein

said reference level is set so as to continuously vary in correspondent to a change of said temperature of said switching element, and

said control portion continuously adjust said reference level in correspondent to said temperature measured by said temperature measuring portion.

3. The semiconductor device according to claim 1, said control portion comprising:

a memory for holding data of said reference level related to respective temperatures of said switching element; and

a reference level controller for reading data of said reference level related to said temperature of said switching element measured by said temperature measuring portion from said memory and adjusting said reference level based on said data.

4. The semiconductor device according to claim 3, said control portion further comprising:

a communication unit for communicating data with the outside; and

a first memory controller capable of rewriting said data of said reference level held by said memory controller based on said data received by said communication unit.

5. The semiconductor device according to claim 3, said control portion further comprising a second memory controller for controlling said memory to hold said amount of said current flowing through said switching element measured by said current measuring portion as said data of said reference level, in correspondent to said temperature of said switching element of the time measured by said temperature measuring portion.

6. A data setting method of a reference level for detecting an overcurrent in a semiconductor device for driving a predetermined switching element and having a protection function for preventing said overcurrent from flowing through said switching element,

wherein said semiconductor device comprises:

a current measuring portion for measuring an amount of current flowing through said switching element;

a protection circuit portion for limiting said current flowing through said switching element when said amount of said current measured by said current measuring portion reaches said reference level, thereby protecting said switching element;

a temperature measuring portion for measuring the temperature of said switching element; and

a control portion for adjusting said reference level based on said temperature of said switching element measured by said temperature measuring portion;

wherein said control portion comprises;

a memory for holding data of said reference level related to respective temperatures of said switching element; and

a reference level controller for reading data of said reference level related to said temperature of said switching element measured by said temperature measuring portion from said memory and adjusting said reference level based on said data, and

wherein said data setting method comprises the steps of;

(a) applying a current of a predetermined level to said switching element,

(b) setting said switching element at a predetermined temperature,

(c) measuring the amount of said current flowing through said switching element by said current measuring portion and measuring the temperature of said switching element at the time by said temperature measuring portion, and

(d) controlling said memory to hold said amount of said current and said temperature measured in said step (c) as said data of said reference level by relating each other.