Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element

• US 20050100074A1
• Filed: 09/17/2004
• Published: 05/12/2005
• Est. Priority Date: 09/10/1999
• Status: Abandoned Application

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Inventors: Fukunaga, Toshiaki, Okazaki, Yoji
• Application Number:
  US10/942,975
• Publication Number:
  US 20050100074A1
• Time in Patent Office: Days
• US Class Current: 372/75
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/02326 Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
• CPC Class Codes: H01S 5/028 Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
• CPC Class Codes: H01S 5/041 Optical pumping
• CPC Class Codes: H01S 5/141 using a wavelength selective device, e.g. a grating or etalon H01S5/146 takes precedence
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/2009 by using electron barrier layers
• CPC Class Codes: H01S 5/3086 doping of the active layer
• CPC Class Codes: H01S 5/3216 quantum well or superlattice cladding layers
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A laser apparatus includes a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light; and a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with the first laser light, and emitting second laser light. In addition, the surface-emitting semiconductor element may have a first mirror arranged on one side of the second active layer, and a second mirror may be arranged outside the surface-emitting semiconductor element so that the first and second mirrors form a resonator.

Claims

1-9. -9. (canceled)

10. A laser apparatus comprising:

a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light;

a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with said first laser light, and emitting second laser light, and

at least one third semiconductor laser element, each having a third active layer made of a GaN-based compound, and emits third laser light,

said surface-emitting semiconductor element being excited with said third laser light together with said first laser light.

11. A laser apparatus according to claim 10, wherein said second active layer includes a plurality of quantum wells.

12. A laser apparatus according to claim 11, wherein said second active layer includes twenty or more quantum wells.

13. A laser apparatus according to claim 10, wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.

14. A laser apparatus according to claim 13, wherein said second active layer includes a plurality of quantum wells.

15. A laser apparatus according to claim 14, wherein said second active layer includes twenty or more quantum wells.

16. A laser apparatus according to claim 10, wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.

17. A laser apparatus according to claim 16, wherein said second active layer includes a plurality of quantum wells.

18. A laser apparatus according to claim 17, wherein said second active layer includes twenty or more quantum wells.

19. A laser apparatus comprising:

a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light;

a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with said first laser light, and emitting second laser light, and

at least one third semiconductor laser element, each having a third active layer made of a GaN-based compound, and emits third laser light,

said surface-emitting semiconductor element being excited with fourth laser light which is produced by polarization coupling of said first and third laser light.

20. A laser apparatus according to claim 19, wherein said second active layer includes a plurality of quantum wells.

21. A laser apparatus according to claim 20, wherein said second active layer includes twenty or more quantum wells.

22. A laser apparatus according to claim 19, wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.

23. A laser apparatus according to claim 22, wherein said second active layer includes a plurality of quantum wells.

24. A laser apparatus according to claim 23, wherein said second active layer includes twenty or more quantum wells.

25. A laser apparatus according to claim 19, wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.

26. A laser apparatus according to claim 25, wherein said second active layer includes a plurality of quantum wells.

27. A laser apparatus according to claim 26, wherein said second active layer includes twenty or more quantum wells.

28-36. -36. (canceled)

37. A laser apparatus comprising:

a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light;

a surface-emitting semiconductor element being excited with said first laser light, emits second laser light, and having a second active layer made of a GaN-based compound and a first mirror arranged on one side of said second active layer;

a second mirror arranged outside of said surface-emitting semiconductor element so that said first and second mirrors form a resonator; and

at least one third semiconductor laser element, each having a third active layer made of a GaN-based compound, and emits third laser light,

said surface-emitting semiconductor element being excited with said third laser light together with said first laser light.

38. A laser apparatus according to claim 37, wherein said second active layer includes a plurality of quantum wells.

39. A laser apparatus according to claim 38, wherein said second active layer includes twenty or more quantum wells.

40. A laser apparatus according to claim 37, wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.

41. A laser apparatus according to claim 40, wherein said second active layer includes a plurality of quantum wells.

42. A laser apparatus according to claim 41, wherein said second active layer includes twenty or more quantum wells.

43. A laser apparatus according to claim 37, wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.

44. A laser apparatus according to claim 43, wherein said second active layer includes a plurality of quantum wells.

45. A laser apparatus according to claim 44, wherein said second active layer includes twenty or more quantum wells.

46. A laser apparatus comprising:

a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light;

a surface-emitting semiconductor element being excited with said first laser light, emits second laser light and having a second active layer made of a GaN-based compound and a first mirror arranged on one side of said second active layer;

a second mirror arranged outside of said surface-emitting semiconductor element so that said first and second mirrors form a resonator; and

at least one third semiconductor laser element, each having a third active layer made of a GaN-based compound, and emits third laser light,

said surface-emitting semiconductor element being excited with fourth laser light which is produced by polarization coupling of said first and third laser light.

47. A laser apparatus according to claim 46, wherein said second active layer includes a plurality of quantum wells.

48. A laser apparatus according to claim 47, wherein said second active layer includes twenty or more quantum wells.

49. A laser apparatus according to claim 46, wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.

50. A laser apparatus according to claim 49, wherein said second active layer includes a plurality of quantum wells.

51. A laser apparatus according to claim 50, wherein said second active layer includes twenty or more quantum wells.

52. A laser apparatus according to claim 46, wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.

53. A laser apparatus according to claim 52, wherein said second active layer includes a plurality of quantum wells.

54. A laser apparatus according to claim 53, wherein said second active layer includes twenty or more quantum wells.