Vertical impedance sensor arrangement and method for producing a vertical impedance sensor arrangement

• US 20050100938A1
• Filed: 09/09/2004
• Published: 05/12/2005
• Est. Priority Date: 03/14/2002
• Status: Abandoned Application

• Current Assignee: Siemens AG
• Original Assignee: Infineon Technologies AG
• Inventors: Roesner, Wolfgang, Luyken, Richard Johannes, Hofmann, Franz
• Application Number:
  US10/939,319
• Publication Number:
  US 20050100938A1
• Time in Patent Office: Days
• US Class Current: 435/6
• CPC Class Codes: G01N 27/3276 being a hybridisation with immobilised receptors using a FET type sensor G01N27/4145; concerning the hybridisation C12Q1/68
• CPC Class Codes: G01N 33/54386 Analytical elements

Abstract

Vertical impedance sensor arrangement including a substrate, a first electrically conductive structure having a first uncovered surface and being arranged in and/or on the substrate, a spacer arranged above the substrate and/or at least partially on the first electrically conductive structure, a second electrically conductive structure having a second uncovered surface and being arranged on the spacer, and capture molecules, which are immobilized on the first and on the second uncovered surface, are set up such that particles to be detected hybridize with the capture molecules. The spacer is formed separately from the substrate, and the thickness of the spacer is defined by means of a deposition method.

Claims

1. A vertical impedance sensor arrangement, comprising:

a substrate;

a first electrically conductive structure having a first uncovered surface and being arranged in and/or on the substrate;

a spacer arranged above the substrate and/or at least partially on the first electrically conductive structure, said spacer being formed separately from the substrate, and the thickness of said spacer being defined by means of a deposition method;

a second electrically conductive structure having a second uncovered surface and being arranged on the spacer; and

capture molecules, which are immobilized on the first and on the second uncovered surface, are set up such that particles to be detected hybridize with said capture molecules.

2. The vertical impedance sensor arrangement as claimed in claim 1, wherein a minimum distance between the first and second uncovered surfaces is at most 200 nm.

3. The vertical impedance sensor arrangement as claimed in claim 1, wherein a minimum distance between the first and second uncovered surfaces is at most 50 nm.

4. The vertical impedance sensor arrangement as claimed in claim 1, wherein the capture molecules are oligonucleotides, DNA half strands, peptides, proteins, or low molecular weight compounds.

5. The vertical impedance sensor arrangement as claimed in claim 1, wherein a porous permeation layer is arranged between at least one of the electrically conductive structures and the capture molecules and has pores of a predetermined size, such that molecules whose size is less than or equal to the predetermined pore size diffuse through the porous material, whereas molecules whose size exceeds the predetermined pore size do not diffuse through the porous material.

6. The vertical impedance sensor arrangement as claimed in claim 1, further comprising at least one protective layer arranged on at least one part of the first and/or of the second uncovered surface, wherein the part or parts covered with the protective layer are free of capture molecules.

7. The vertical impedance sensor arrangement as claimed in claim 1, wherein the substrate is a silicon substrate, a layer sequence comprising silicon and silicon nitride, or a layer sequence comprising silicon and silicon oxide.

8. The vertical impedance sensor arrangement as claimed in claim 1, wherein the first and/or the second electrically conductive structures are/is produced from one or a combination of materials selected from the group consisting of gold, platinum, silver, silicon, aluminum, and titanium.

9. The vertical impedance sensor arrangement as claimed in claim 1, wherein the spacer is produced from one or a combination of materials selected from the group consisting of silicon oxide and silicon nitride.

10. The vertical impedance sensor arrangement as claimed in claim 6, wherein the protective layer is produced from one or a combination of materials selected from the group consisting of silicon oxide and silicon nitride.

11. The vertical impedance sensor arrangement as claimed in claim 1, wherein the first and/or the second electrically conductive structures are/is formed as a conductor track, as a conductor plane, in a manner essentially running in meandering fashion, or in a manner essentially running spirally.

12. The vertical impedance sensor arrangement as claimed in claim 1, wherein the first and second electrically conductive structures are arranged essentially parallel or perpendicular to one another.

13. The vertical impedance sensor arrangement as claimed in claim 1, further comprising a plurality of first electrically conductive structures and/or a plurality of second electrically conductive structures.

14. The vertical impedance sensor arrangement as claimed in claim 1, arranged as a biosensor for detecting macromolecular biomolecules.

15. A method for producing a vertical impedance sensor arrangement, comprising the steps of:

forming a first electrically conductive structure, which has a first uncovered surface, in and/or on a substrate;

forming a spacer above the substrate and/or at least partially on the first electrically conductive structure, said spacer being formed separately from the substrate, and the thickness of said spacer being defined by means of a deposition method;

forming a second electrically conductive structure, which has a second uncovered surface, on the spacer; and

immobilizing capture molecules on the first and second uncovered surfaces, said capture molecules being set up such that particles to be detected hybridize with said capture molecules.

16. The method as claimed in claim 15, wherein the spacer is formed by means of an atomic layer deposition method or a chemical vapor phase epitaxy method.