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Copper interconnect structure having stuffed diffusion barrier

  • US 20050101132A1
  • Filed: 11/26/2004
  • Published: 05/12/2005
  • Est. Priority Date: 12/06/2000
  • Status: Active Grant
First Claim
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1. A process for copper metallization comprising:

  • depositing a diffusion barrier comprising grain boundaries over a semiconductor substrate;

    depositing a layer of a reactive metal over the diffusion barrier;

    stuffing the grain boundaries of the diffusion barrier with a compound of the reactive metal; and

    depositing a layer of copper over the diffusion barrier.

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