Methods for forming protective layers on semiconductor device substrates
First Claim
1. A method for fabricating a protective structure on a semiconductor device, comprising selectively altering a state of a protective material over at least a portion of a surface of a semiconductor device structure from an unconsolidated state to an at least partially consolidated state, without at least partially consolidated protective material located over another portion of the surface.
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Abstract
Methods for forming protective layers on semiconductor devices, including semiconductor devices that are carried by fabrication substrates, that are parts of assemblies, and that include individual dies, includes at least partially consolidating previously unconsolidated material selectively, in accordance with a program. The method may include use of a machine vision system or other object recognition apparatus to provide precise die-specific alignment. A protective structure may be formed to include at least one layer or segment of dielectric material having a controlled thickness or depth and a precise boundary. The layer or segment may include precisely sized, shaped, and located apertures through which conductive terminals, such as bond pads, on the surface of the die may be accessed. Dielectric material may also be employed as a structure to mechanically reinforce a die-to-substrate (e.g., die-to-lead frame) attachment.
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Citations
37 Claims
- 1. A method for fabricating a protective structure on a semiconductor device, comprising selectively altering a state of a protective material over at least a portion of a surface of a semiconductor device structure from an unconsolidated state to an at least partially consolidated state, without at least partially consolidated protective material located over another portion of the surface.
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10. A method for forming a layer of protective material on at least one specified area on an active surface of one or more selected dice of a plurality of semiconductor dice of a semiconductor substrate, comprising:
selectively altering the state of a protective material over the active surface to at least partially consolidate the protective material over the at least one specified area without forming at least partially consolidated protective material over other regions of the active surface, including regions between at least two adjacent semiconductor dice. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for forming a protective layer on a selected portion of a surface of a semiconductor device, comprising:
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providing a semiconductor die with an active surface thereof secured to a lead frame of a lead frame strip; and
selectively altering a protective material from an unconsolidated state to an at least partially consolidated state over only selected areas of the active surface to form the protective layer. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27)
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28. A method for forming a protective layer on a selected portion of a surface of a semiconductor device structure, comprising:
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recognizing a location and orientation of at least one feature of the semiconductor device structure; and
selectively altering a state of a protective material over at least a portion of the surface from an unconsolidated state to an at least partially consolidated state. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification