Ultraminiature pressure sensors and probes

• US 20050103114A1
• Filed: 05/23/2003
• Published: 05/19/2005
• Est. Priority Date: 05/23/2002
• Status: Active Grant

• Current Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford University)
• Original Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford University)
• Inventors: Shaughnessy, Sara A., Bartsch, Michael S., Bly, Mark J., Kenny, Thomas W.
• Granted Patent: US 6,959,608 B2
• Time in Patent Office: Days
• US Class Current: 73/754
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively

Abstract

A new and versatile ultra-miniature pressure sensor comprises a very thin diaphragm of approximately one micron or less, e.g., 0.2 microns. In some embodiments, the diaphragm has a radius of 20 microns and the pressure sensor can detect signals at or near 0.1 Atm with 1% accuracy. The diaphragm is formed by epitaxial growth of silicon or by bonding and etching. A plurality of high sensitivity piezoresistive strain gauges measure strain of the diaphragm. Less than 0.1 microns thick, the piezoresistive strain gauges are embedded in the diaphragm by ion implantation or formed thereon by epitaxial growth. The ability to form ultra-thin piezoresistive layers on very thin diaphragms enables the miniaturization of the pressure sensor as well as any device that employs it.

Claims

1. An ultraminiature pressure sensing apparatus comprising:

a pressure sensing membrane made of silicon and having a thickness of approximately one micron or less; and

a plurality of high sensitivity piezoresistive strain gauges for measuring strain of said membrane.

3. The ultraminiature pressure sensing apparatus of claim 1 or 2, in which lateral dimensions of said ultraminiature pressure sensing apparatus are directly proportional to said thickness.

4. The ultraminiature pressure sensing apparatus of claim 1 or 2, in which said membrane has a radius of 20 microns, said ultraminiature pressure sensing apparatus capable of detecting pressure signals at or near 0.1 Atm.

5. The ultraminiature pressure sensing apparatus of claim 4, in which said pressure signals are detected with 1% accuracy.

6. The ultraminiature pressure sensing apparatus of claim 1 or 2, in which said membrane is formed by epitaxial growth of silicon.

7. The ultraminiature pressure sensing apparatus of claim 1 or 2, in which said membrane is formed by bonding and etching.

8. The ultraminiature pressure sensing apparatus of claim 1 or 2, in which said piezoresistive strain gauges are less than 0.1 microns thick.

9. The ultraminiature pressure sensing apparatus of claim 1, in which said piezoresistive strain gauges are embedded in said membrane by ion implantation.

10. The ultraminiature pressure sensing apparatus of claim 1 or 2, in which said piezoresistive strain gauges are formed on said membrane by epitaxial growth.

11. The ultraminiature pressure sensing apparatus of claim 1 or 2, in which at least two of said piezoresistive strain gauges are positioned within said membrane and at least two of said piezoresistive strain gauges are positioned on a neighboring support material.

12. The ultraminiature pressure sensing apparatus of claim 11 in which said piezoresistive strain gauges are positioned in a Wheatstone Bridge configuration.

2. An ultraminiature pressure sensing apparatus comprising:

a pressure sensing membrane made of silicon and having a thickness of approximately 0.2 microns or less; and

a plurality of high sensitivity piezoresistive strain gauges for measuring strain of said membrane.