Physical sensor

• US 20050103124A1
• Filed: 11/16/2004
• Published: 05/19/2005
• Est. Priority Date: 11/19/2003
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho (Toyota Motor Corporation)
• Original Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho (Toyota Motor Corporation)
• Inventors: Sugiyama, Jun, Homma, Takahiko, Asai, Mitsuru, Makino, Hiroaki, Takatori, Kazumasa
• Granted Patent: US 7,059,203 B2
• Time in Patent Office: Days
• US Class Current: 73/862.46
• CPC Class Codes: G01L 1/20 by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids of piezo-resistive materials G01L1/18; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress

Abstract

A physical sensor having a pressure sensing layer having such property that electrical resistance is changed by application of a stress, and electrical insulating layers which are integrally formed on opposite two surfaces of the pressure sensing layer, respectively. The pressure sensing layer comprises a matrix comprising glass, and an electrically conductive particle having electrical conductivity and dispersed in the matrix. Preferably, the electrically conductive particle comprises RuO₂, and a thickness of the pressure sensing layer is 1 μm to 200 μm. It is preferable that one pair of electrodes are disposed on the pressure sensing layer.

Claims

1. A physical sensor comprising:

a pressure sensing layer whose electrical resistance is changed by application of a stress; and

electrical insulating layers which are integrally formed on opposite two surfaces of the pressure sensing layer, respectively,

wherein the pressure sensing layer comprises

a matrix comprising glass, and

an electrically conductive particle having electrical conductivity and dispersed in the matrix.

2. The physical sensor according to claim 1, wherein the electrically conductive particle comprises RuO₂.

3. The physical sensor according to claim 1, wherein a thickness of the pressure sensing layer is 1 μ

m to 200 μ

m.

4. The physical sensor according to claim 1, wherein one pair of electrodes are disposed on the pressure sensing layer.

5. The physical sensor according to claim 1, wherein generally spherical pores are formed in the pressure sensing layer.