Solid-state imaging device and method of manufacturing solid-state imaging device background of the invention
First Claim
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1. A solid-state imaging device comprising:
- a structure including at least a silicon layer in which a light-receiving portion for effecting photoelectric-conversion is formed and an interconnection layer formed on the surface side of said silicon layer and in which a lens is formed at the rear side opposite to said surface side of said silicon layer;
an insulating layer buried in said silicon layer around an image pickup region; and
a contact layer for connecting an electrode layer of a pad portion and said interconnection layer of said surface side, wherein said insulating layer is buried around said contact layer.
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Abstract
A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.
96 Citations
19 Claims
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1. A solid-state imaging device comprising:
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a structure including at least a silicon layer in which a light-receiving portion for effecting photoelectric-conversion is formed and an interconnection layer formed on the surface side of said silicon layer and in which a lens is formed at the rear side opposite to said surface side of said silicon layer;
an insulating layer buried in said silicon layer around an image pickup region; and
a contact layer for connecting an electrode layer of a pad portion and said interconnection layer of said surface side, wherein said insulating layer is buried around said contact layer.
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2. A solid-state imaging device comprising:
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a structure including at least a first silicon layer formed of a single crystal silicon layer in which a light-receiving sensor portion for effecting photoelectric-conversion is formed and an interconnection layer formed on the surface side of said first silicon layer;
a second silicon layer formed of an amorphous silicon layer or a polycrystalline silicon layer being buried on said first silicon layer around an image pickup region;
an insulating layer formed on said first silicon layer;
a metal layer buried on said insulating layer at its portion above said second silicon layer; and
a contact layer for connecting an electrode layer and the interconnection layer of said surface side at a pad portion, wherein said insulating layer is buried around said contact layer, said second silicon layer being buried around said insulating layer.
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3. A method of manufacturing a solid-state imaging device including a structure comprising at least a silicon layer in which a light-receiving sensor portion for effecting photoelectric-conversion is formed, an interconnection layer formed on the surface side of said silicon layer and in which a lens is formed on the rear side opposite to said surface side of said silicon layer, comprising:
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a process for forming a groove on said silicon layer around an image pickup region;
a process for forming a groove on said silicon layer at a pad portion;
a process for burying an insulating layer on said groove formed around said image pickup region;
a process for burying an insulating layer on said groove formed at said pad portion;
a process for forming a light-receiving sensor portion on said silicon layer after at least said insulating layer was formed around said image pickup region;
a process for forming said interconnection layer on said surface side of said silicon layer;
a process for connecting said electrode layer to said interconnection layer of said pad portion by burying a conductive material into said insulating layer buried into said groove of said pad portion; and
a process for forming said lens on the back side of said silicon layer by using said insulating layer buried into said groove around said image pickup region as an alignment mark. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of manufacturing a solid-state imaging device comprising a structure including at least a first silicon layer in which a light-receiving sensor portion for effecting photoelectric-conversion is formed, an interconnection layer formed on the surface side of said first silicon layer and in which a lens is formed on the back side opposite to said surface side of said first silicon layer, comprising:
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a process for forming a groove on said first silicon layer around an image pickup region;
a process for forming a groove on said first silicon layer at a pad portion;
a process for burying a second silicon layer made of amorphous silicon or polycrystalline silicon into said groove formed around said image pickup region;
a process for burying a second silicon layer made of amorphous silicon or polycrystalline silicon into said groove formed at a pad portion;
a process for forming a light-receiving sensor portion on said first silicon layer after said second silicon layer was buried around at least said image pickup region;
a process for forming said interconnection layer on said surface side of said first silicon layer;
a process for connecting an electrode layer to said interconnection layer by burying a conductive material through an insulating layer into said second silicon layer buried into said groove of said pad portion; and
a process for forming said insulating layer over said first silicon layer, burying a metal layer on said insulating layer at its portion above said second silicon layer around said image pickup region and forming said lens on the back side of said first silicon layer by using said metal layer as an alignment mark. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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Specification