Test pattern for reliability measurement of copper interconnection line having moisture window and method for manufacturing the same
First Claim
1. A method for fabricating a test pattern for reliability measurement of a copper interconnection line having a moisture window, including:
- a semiconductor substrate;
a first inter-layer insulation layer formed on the substrate;
a plurality of bottom copper interconnection lines buried in the first inter-layer insulation layer;
a second inter-layer insulation layer on the plurality of bottom copper interconnection lines and the first inter-layer insulation layer;
a plurality of top copper interconnection lines filled in the second inter-layer insulation layer and connected to the plurality of bottom copper interconnection lines through the plurality of via contacts; and
a passivation layer covering the plurality of top copper interconnection lines and having a plurality of moisture windows in which moistures are flown during an electro migration (EM) test.
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Accused Products
Abstract
Disclosed is a test pattern for a reliability measurement of a copper interconnection line having a moisture window and a method for manufacturing the same. The method includes the steps of: a first inter-layer insulation layer formed on the substrate; a plurality of bottom copper interconnection lines buried in the first inter-layer insulation layer; a second inter-layer insulation layer on the plurality of bottom copper interconnection lines and the first inter-layer insulation layer; a plurality of top copper interconnection lines filled in the second inter-layer insulation layer and connected to the plurality of bottom copper interconnection lines through the plurality of via contacts; and a passivation layer covering the plurality of top copper interconnection lines and having a plurality of moisture windows in which moistures are flown during an electro migration (EM) test.
15 Citations
13 Claims
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1. A method for fabricating a test pattern for reliability measurement of a copper interconnection line having a moisture window, including:
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a semiconductor substrate;
a first inter-layer insulation layer formed on the substrate;
a plurality of bottom copper interconnection lines buried in the first inter-layer insulation layer;
a second inter-layer insulation layer on the plurality of bottom copper interconnection lines and the first inter-layer insulation layer;
a plurality of top copper interconnection lines filled in the second inter-layer insulation layer and connected to the plurality of bottom copper interconnection lines through the plurality of via contacts; and
a passivation layer covering the plurality of top copper interconnection lines and having a plurality of moisture windows in which moistures are flown during an electro migration (EM) test. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for fabricating a test pattern for reliability measurement of a copper interconnection line with a moisture window, comprising the steps of:
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forming a trench inside of the first inter-layer insulation layer on the substrate;
forming the second inter-layer insulation layer on the plurality of bottom copper interconnection lines and the first inter-layer insulation layer;
forming the plurality of top copper interconnection lines buried in the second inter-layer insulation layer through a dual damascene process and connected to the plurality of bottom copper interconnection lines through a plurality of via contacts; and
forming a passivation layer provided with the plurality of moisture windows allowing the moisture to flow in while testing the EM and covering the second inter-layer insulation layer and the plurality of top copper interconnection lines. - View Dependent Claims (8, 9, 10, 11)
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12. A method for fabricating a test pattern for reliability measurement of a copper interconnection line with a moisture window, comprising the steps of:
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forming the plurality of bottom copper interconnection lines connected to the plurality of top copper interconnection lines through the plurality of the via contacts;
forming the passivation layer provided with the moisture window allowing the moisture to flow in the top portion of the plurality of top copper interconnection lines during the reliability measurement;
measuring a degree of resistance of the plurality of top copper interconnection lines and the plurality of bottom copper interconnection lines in the air;
measuring again the degree of resistance of the plurality of top copper interconnection lines and the plurality of bottom copper interconnection lines on a hot plate by applying a heat process; and
finishing the reliability measurement at a point where the resistance change of the bottom copper interconnection line and the top copper interconnection line is great. - View Dependent Claims (13)
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Specification